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Physica Status Solidi (A) Applied Research

Volumn 201, Issue 9, 2004, Pages 2067-2075

Electrochemical etching and CV-profiling of GaN

(3) Wolff, T a Rapp, M a Rotter, T b

a Ingenieurbüro WEP ^* (Germany)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTROCHEMISTRY; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; OXIDATION; ROBUSTNESS (CONTROL SYSTEMS); SEALING (CLOSING); SEMICONDUCTOR MATERIALS; THIN FILMS;

CYCLIC OXIDATION; DILUTED ELECTROLYTES; ELECTROCHEMICAL ETCHING; OXIDE FILMS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 4043138782 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/pssa.200406829 Document Type: Article

Times cited : (19)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.