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Volumn 293, Issue 1, 2006, Pages 18-21
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Selective etching of dislocations in violet-laser diode structures
d
TOPGAN LTD
(Poland)
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Author keywords
A1. Etching; A1. Linear defects; B1. Gallium nitride
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Indexed keywords
DENSITY (SPECIFIC GRAVITY);
DISLOCATIONS (CRYSTALS);
ETCHING;
GALLIUM NITRIDE;
SEMICONDUCTOR QUANTUM WELLS;
DEFECT-SELECTIVE ETCHING;
LASER DIODE STRUCTURES;
LINEAR DEFECTS;
LOWEST DISLOCATION DENSITY;
SEMICONDUCTOR LASERS;
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EID: 33745959748
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.04.099 Document Type: Article |
Times cited : (14)
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References (10)
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