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Volumn 293, Issue 1, 2006, Pages 18-21

Selective etching of dislocations in violet-laser diode structures

Author keywords

A1. Etching; A1. Linear defects; B1. Gallium nitride

Indexed keywords

DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); ETCHING; GALLIUM NITRIDE; SEMICONDUCTOR QUANTUM WELLS;

EID: 33745959748     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.04.099     Document Type: Article
Times cited : (14)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.