Etching, Raman and PL study of thick HVPE-grown GaN

Materials Science in Semiconductor Processing

Volumn 9, Issue 1-3, 2006, Pages 175-179

  Weyher, J L ^a,b   Lewandowska, R ^c   Macht, L ^a   Lucznik, B ^b   Grzegory, I ^b  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c UNIV MONTPELLIER   (France)

Author keywords

A1. Etching; A3. Hydride vapor phase epitaxy; B1. Gallium nitride; characterization; defects

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; CRYSTAL STRUCTURE; DEFECTS; ELECTROLESS PLATING; ETCHING; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY;

ALIGNED DISLOCATIONS; GROWTH STRIATION PATTERNS; HYDRIDE VAPOR-PHASE EPITAXY; REMARKABLE DIFFERENCE;

GALLIUM NITRIDE;

EID: 33744513332     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.01.083     Document Type: Article

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