The direct influence of polarity on structural and electro-optical properties of heteroepitaxial GaN

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13345-13350

  Macht, L ^a,d   Weyher, J L ^a,b   Hageman, P R ^a   Zielinski, M ^c   Larsen, P K ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c INSTITUTE OF PHYSICS   (Poland)

^d Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMISTRY; ELECTROOPTICAL EFFECTS; EPITAXIAL GROWTH; ETCHING; IMPURITIES; MIXTURES; MORPHOLOGY; ORGANIC ACIDS; POLARIZATION; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY;

DEFECT STRUCTURES; GROWTH PROCESS; HETEROEPITAXIAL LAYERS; IMPURITY INCORPORATION; WET CHEMICAL ETCHING;

GALLIUM NITRIDE;

EID: 0037122179     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/387     Document Type: Article

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