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Volumn 289, Issue 2, 2006, Pages 520-526
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Erratum to "Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC". [J. Crystal Growth 289 (2006) 520-526] (DOI:10.1016/j.jcrysgro.2005.11.096);Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC
a
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Author keywords
A1. Defect selective etching; A1. Dislocations; A1.Etching; A1.Temperature sensor; B2. SiC
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Indexed keywords
ACTIVATION ENERGY;
COMPOSITION;
DISLOCATIONS (CRYSTALS);
POTASSIUM COMPOUNDS;
SILICON CARBIDE;
DEFECT SELECTIVE ETCHING;
DISLOCATIONS;
QUANTITATIVE DEFECT ANALYSIS;
TEMPERATURE SENSORS;
ETCHING;
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EID: 33644901839
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.10.196 Document Type: Erratum |
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Times cited : (88)
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References (13)
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