Defect-selective etching of SiC

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 4, 2005, Pages 578-583

  Weyher, J L ^a,b   Lazar, S ^c   Borysiuk, J ^b   Pernot, J ^a,d,e  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^d UNIV MONTPELLIER   (France)

^e UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT-SELECTIVE ETCHING; PHOTO-ETCHING; POTASSIUM HYDROXIDE (KOH); SODIUM HYDROXIDE (NAOH);

CALIBRATION; DEFECTS; DISLOCATIONS (CRYSTALS); ETCHING; MOLTEN MATERIALS; POTASSIUM COMPOUNDS; SODIUM COMPOUNDS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

SILICON CARBIDE;

EID: 25444483071     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460432     Document Type: Conference Paper

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