Influence of selective GaN islands on optical properties of GaN films grown on sapphire substrate

Materials Science and Engineering: B

Volumn 97, Issue 1, 2003, Pages 9-12

  Haffouz, S ^a   Hageman, P R ^b   Kirilyuk, V ^b   Macht, L ^b   Weyher, J L ^b   Larsen, P K ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

GaN films; Photoluminescence; Sapphire

Indexed keywords

ELECTROCHEMISTRY; ETCHING; FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOCHEMICAL REACTIONS; PHOTOLUMINESCENCE; SAPPHIRE; SUBSTRATES;

PHOTOELECTROCHEMICAL (PEC) ETCHING;

OPTICAL FILMS;

EID: 0037437741     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00387-2     Document Type: Article

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