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Volumn 27, Issue 1-3, 2004, Pages 247-249

Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures

(6) Kamler, G a Borysiuk, J a Weyher, J L a,b Presz, A a Wozniak M c Grzegory, I a

a INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

b RADBOUD UNIVERSITY NIJMEGEN (Netherlands)

c WARSAW UNIVERSITY OF TECHNOLOGY (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; EUTECTICS; GALLIUM NITRIDE; MIXTURES; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

DISCLINATIONS; EPITAXIAL LAYERS; INDIRECT EVIDENCE OF DISLOCATIONS AND OTHER DEFECTS; LINEAR DEFECTS;

ETCHING;

EID: 10244242457 PISSN: 12860042 EISSN: None Source Type: Journal
DOI: 10.1051/epjap:2004103 Document Type: Conference Paper

Times cited : (11)

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