Evolution of basal plane dislocations during 4H -silicon carbide homoepitaxy

Applied Physics Letters

Volumn 87, Issue 16, 2005, Pages 1-3

  Zhang, Z ^a   Sudarshan, T S ^a  

^a University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

THREADING EDGE DISLOCATIONS; TRACK DISLOCATION;

SILICON CARBIDE; SUBSTRATES;

DISLOCATIONS (CRYSTALS);

EID: 28444468134     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2108109     Document Type: Article

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