Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layers

Journal of Crystal Growth

Volumn 282, Issue 1-2, 2005, Pages 45-48

  Kamler, G ^a   Borysiuk, J ^a   Weyher, J L ^a,b   Czernecki, R ^a   Leszczynski M ^a   Grzegory, I ^a   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

A1. Etching; A1. Planar defects; B1. Gallium nitride

Indexed keywords

DOPING (ADDITIVES); ETCHING; MAGNESIUM PRINTING PLATES; METALLORGANIC VAPOR PHASE EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

INVERSION DOMAINS; PLANAR DEFECTS; POLARITY INVERSION; STRUCTURAL QUALITY;

GALLIUM NITRIDE;

EID: 22644440138     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.04.092     Document Type: Article

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