Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 318-321

  Weyher, J L ^a,b   Albrecht, M ^c   Wosinski, T ^d   Nowak, G ^b   Strunk, H P ^c   Porowski, S ^b  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^d INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; ETCHING; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

INDENTATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035932193     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00656-5     Document Type: Article

References (14)