CMOS devices architectures and technology innovations for the nanoelectronics era

International Journal of High Speed Electronics and Systems

Volumn 16, Issue 1, 2006, Pages 193-219

  Deleonibus, S ^a   De Salvo, B ^a   Ernst, T ^a   Faynot, O ^a   Poiroux, T ^a   Scheiblin, P ^a   Vinet, M ^a  

^a CEA LETI   (France)

Author keywords

Architecture; CMOS; Devices; Nanoelectronics

Indexed keywords

ARCHITECTURE; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRIC POWER UTILIZATION; ELECTRONIC EQUIPMENT; ENERGY DISSIPATION; NANOSTRUCTURED MATERIALS; OPTIMIZATION;

CMOS DEVICES ARCHITECTURES; GATE DIELECTRIC; NANOELECTRONICS; SYSTEM-ON-CHIP;

CMOS INTEGRATED CIRCUITS;

EID: 33747651630     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156406003618     Document Type: Conference Paper

References (120)

1. The International Technology Roadmap for Semiconductors (2003 edition).
2. H. Iwai, IEDM Tech Digest 2004, pp. 11-14, San Francisco(CA), Dec. 2004
3. S. Deleonibus et al., IEEE Electron Dev. Letters, pp173-175, April 2000.
4. G.Bertrand et al., Silicon Nanoelectronics Workshop 2000, pp10-11, June 2000, Honolulu(HI)
5. G.Bertrand et al., ULIS2003 Digest, pp 10-13, March 2003, Udine (Italy).
6. K. Romanjek et al., IEEE Electron Dev. Lett, Aug. 2004; vol 25 no8 pp. 583-585
7. S.Deleonibus et al., ESSDERC Tech. Digest 1999, pp.119-126,Leuven, Sept. 1999
8. H.Iwai et al IEDM Tech Digest 1998, pp.163-166, Dec. 1998, San Francisco(CA)
9. C.Caillat et al., VLSI Tech. Symp. Tech. Digest 1999, pp. 89-90, June 1999, Kyoto(Japan).
10. Y.Taur et al IBM Journal of Research and Development, vol. 39,N1/2,pp.245-260, 1995.
11. K.Gopalakrishnan et al. IEDM2002 Tech. Digest, pp.289-291, Dec. 2002, San Francisco(CA).
12. T.Oyamatsu et al., VLSI Tech. Symp. Tech. Digest,pp.89-90, June 1993, Kyoto(Japan).
13. W.Schockley, Solid State Electron.,2,pp.35-67, 1961
14. V.De et al., VLSI Tech. Symp. Tech. Digest 1998, pp.95-96, June 1998, Honolulu(HI)
15. W.Wong et al IEDM Tech Digest 1993, pp.705-708, Dec. 1993, Washington(DC)
16. T.Ohguro et al., IEEE Trans. Electron Dev., vol. 45,no3, pp. 710-716, March 1998
17. T.Ernst et al., VLSI Technology Symposium 2003 Tech. Digest, pp 51-52, Kyoto(Japan)
18. F.Ducroquet et al., IEDM Tech Digest 2004, pp. 437- 440, Dec. 2004, San Francisco(CA)
19. M.Carroll et al., IEDM Tech Digest 2000, pp.145-148, Dec. 2000, San Francisco(CA)
20. K.Rim et al., IEDM Tech Digest 1998, pp.707-710, Dec. 1998, San Francisco(CA)
21. J M Hartmann et al. Semicond. Sci. Technol. 19 (2004) 311-318
22. E A Fitzgerald et al. 1999 Phys. Status Solidi a, 171-227
23. S. Bedell et al., MRS Spring Meeting Proc., April 2004
24. F. Andrieu et al., ESSDERC 2003 Proc., Sept.2003, Estoril(Portugal)
25. J. Alieu et al., ESSDERC 98, p. 144, Sept. 1998, Bordeaux (France)
26. A. -C. Lindgren et al., ESSDERC 02, p. 175, Sept. 2002, Bologna(Italy)
27. N. Collaert et al., Silicon Nanoelectronics Workshop Digest 2002, p. 15-16, June 2002, Honolulu(HI)
28. N. Collaert et al., ESSDERC 02, p. 263, Sept. 2002, Bologna(Italy)
29. K. A. Jenkins and K. Rim, IEEE Electron. Dev. Let., vol. 23, no. 6, June 2002
30. G. Xia et al., IEEE Trans, on Electron Devices, vol.51, no12, Dec. 2004.
31. H. Kawasaki et al., IEDM 2004 Tech. Digest, p169-172, Dec 2004, San Francisco(CA).
32. K.Rim et al., VLSI Tech Symp Digest 2002,pp.l2-13, June 2002, Honolulu(HI)
33. O. Weber et al. VLSI Tech. Symp. Digest 2004, pp. 42-43, June 2004, Honolulu(HI).
34. B. Ghyselen et al., Solid-State Electronics, Volume 48, Issue 8, August 2004, Pages 1285-1296
35. T. Tezukae et al., 2002 VLSI Tech. Symp. Digest, pp. 96-97, June 2002, Honolulu(HI).
36. F. Boeuf et al., IEDM 2004 Digest, pp. 425-428, Dec 2004, San Francisco(CA).
37. F. Andrieu et al., 2005 VLSI Tech. Symp. Digest, pp. 176-177,June 2005, Kyoto(Japan),
38. T. Mizuno et al., 2003VLSI Techn. Symp. Digest, p. 97-98, June 2003, Kyoto(Japan),
39. M. Yang et al., 2004 VLSI Tech. Symp. Pp. 160-161, June 2004, Honolulu(HI).
40. M.L. Lee and E. A. Fitzgerald, IEDM 2003 Tech Digest, pp. 429-131, Dec. 2003, Washington(DC)
41. A.Chatterjee et al., IEDM Tech Digest 1998, pp.777-780, Dec. 1998, San Francisco(CA)
42. A.Yagashita et al. IEDM Tech Digest 1998, pp.785-788, Dec. 1998, San Francisco(CA)
43. B.Guillaumot et al., IEDM 2002 Tech. Digest, pp. 335-338, Dec 2002, San Francisco(CA)
44. B.Tavel et al., IEDM 2001 Digest, p.825-828, Dec 2001, Washington(DC)
45. J. Kedzierski et al., IEDM 2002 Digest, pp.247-250,Dec. 2002, San Francisco(CA),
46. W.P. Maszara et al., IEDM 2002 Digest, pp. 367-370,Dec. 2002, San Francisco(CA),
47. C.Hobbs et al., VLSI Technology Symposium 2003 Tech. Digest, pp 9-10, Kyoto(Japan)
48. rd ULIS Workshop 2002, pp139-142,March 2002, Munich(FRG)
49. G.Timp et al., IEDM Tech Digest 1998, pp.615-618, Dec. 1998, San Francisco(CA)
50. S.Takagi et al., IEDM Tech Digest 1998, pp.619-622, Dec. 1998, San Francisco(CA)
51. J.Lee et al. IEDM Tech Digest 1999, pp.133-136, Dec. 1999, Washington(DC)
52. H.Iwai et al., IEDM Tech Digest 2002, pp. 625-627, Dec 2002, San Francisco(CA).
53. O. Weber et al., IEDM 2004, San Fransisco, pp.867-670, Dec. 2004, San Francisco(CA).
54. JL Pelloie, ISSCC Tech Digest 1999, p.428, Feb. 1999, San Francisco(CA)
55. L.Leobandung et al. IEDM Tech Digest 1998, pp.403-407, Dec. 1998, San Francisco(CA)
56. J. Lolivier et al ECS Spring 2003, April 2003, Paris(France)
57. B. Doris et al., IEDM 2002 Tech Digest, pp267-270, Dec 2002, San Francisco(CA)
58. J.Lolivier et al. SOI Conference 2004, October 2004, Charleston(SC).
59. H.Nakayama et al., IEEE SOI conf.2000 Proc, pp.128-129, Oct 2000, Wakefield(Mass)
60. K.Oshima et al. SOI Conference 2002 Tech Digest, pp 95-96, Oct 2002,
61. H.S.P. Wong et al., IEDM Tech Digest 1997, pp.427-430, Dec. 1997, Washington(DC)
62. F.Allibert et al., ESSDERC 2001, Sept 2001, Nurnberg(FRG)
63. B.Yu et al., IEDM 2002 Tech Digest, pp 251-253, Dec 2002, San Francisco(CA)
64. J. Kedzierski et al., IEDM 2002 Tech Digest, pp247-250, Dec 2002, San Francisco(CA)
65. FLYang et al., IEDM 2002 Tech Digest, pp255-258, Dec 2002, San Francisco(CA)
66. E.C.Jones et al., Dev. Res. Conf. 2001 Digest, June 2001.
67. T. Sekigawa, in Solid State Elec. 27 (1984), 827-828.
68. D. Hisamoto, in Technical Digest of IEDM (1998), 833-836.
69. F. Balestra et al., IEEE Elec. Dev. Lett. 8 (1987), 410-412.
70. M.Vinet et al., IEEE Electron Dev. Letters, vol.26, no5, pp. 317-319,May 2005.
71. M.Vinet et al., ECS Spring meeting 2005 Proc., pp285-296, May 2005, Québec(CA)
72. T.Poiroux et al., ULIS2005 Proc, pp.71-74,April 2005, Bologna (Italy)
73. T.Poiroux et al., INFOS05, June 2005, Leuven(Belgium),to be presented.
74. M. Vinet et al., Int. Conf. on Solid-State Devices and Materials 2004 Proc, 768-769, Sept 2004, Tokyo(Japan).
75. J.P. Colinge et al., IEDM 1990 Digest, pp. 595-598, Dec1990, San Francisco(CA).
76. S. Harrison et al., IEDM 2003 Digest, pp. 449-452, Dec 2003, Washington(DC).
77. K.W. Guarini et al., IEDM 2001 Digest, pp. 425-428, Dec 2001, Washington(DC).
78. J.H. Lee et al., IEDM 1999 Digest, pp.71-74, Dec 1999, Washington(DC).
79. J. Lolivier et al., ESSDERC 2004 Proc., pp177-180, Sept 2004, Leuven(Belgium).
80. X. Huang et al., IEDM 1999 Digest, pp.67-70, Dec. 1999, Washington(DC)
81. B. Doyle et al., VLSI Tech. Symp. 2003 Digest, pp.133-134, June 2003, Kyoto(Japan).
82. F.L. Yang et al., IEDM 2002 Digest, 255-258, Dec2002, San Francisco(CA).
83. J.T. Park et al., IEEE Electron Device Letters 22 (2001), 405-406.
84. F.L. Yang et al., Symp. on VLSI Tech. 2004, 196, June 2004, Honolulu(HI).
85. Y.K. Choi et al., Solid State Elec. 46 (2002), 1595-1601.
86. C.Jahan et al., IEEE VLSI Tech Symp. 2005, Kyoto(Japan), June 2005 to be presented.
87. J.P. Colinge, Multiple-gate SOI MOSFETs, in Solid State Elec. 48 (2004), 897-905.
88. J.G. Fossum et al., IEEE Trans. on Elec. Dev. 49 (2002), 808-811.
89. H.S.P. Wong et.al., IEDM 1998 Digest, pp.407-410.,Dec1998, San Francisco(CA).
90. T. Ernst et al., in IEEE Trans, on Elec. Dev. 50 (2003), 830-838.
91. F. Gamiz et al., in Journal of Appl. Phys. 94 (2003), 5732-5741.
92. K. Suzuki et al., IEEE Trans, on Elec. Dev. 40 (1993), 2326-2329.
93. J.M.Ha et al., IEDM Tech Digest 1998, pp.639-642, Dec. 1998, San Francisco(CA)
94. K.Goto et al., IEDM Tech Digest 1997, pp.471-474, Dec. 1997, Washington(DC)
95. M.Takase et al., IEDM Tech Digest 1997, pp.475-478, Dec. 1997, Washington(DC)
96. Y.Sasaki et al., VLSI Techn. Symp. 2004 Tech Digest,pp.180-181, June 2004, Honolulu(HI)
97. T.Noguchi et al., Proc. Of Mat. Res. Soc., 146, 35(1985)
98. nd IWJT 2001, IEEE-Cat.No.01EX541C, 2001: 91-4., Nov 2001, Tokyo(Japan)
99. T.Ohguro, ECS Symp on ULSI 1997, p275, Oct. 1997, Montreal(CA)
100. R. Nuryadiet al., Journal Vac. Sci. Tech. B20(1) (2002), 167.
101. E. Dubois and G. Larrieu, Solid State Elec. (2002), 997.
102. B.Y. Tsui and C.P. Lin, IEEE Elec. Dev. Lett. (2004), 430-433.
103. G.Niu et al., IEEE Trans Electron Dev.,46,1999,pp.1912 -1914.
104. K. Chen et al., Solid State Electronics, 39, 1996, pp. 1515-1518.
105. S. Datta et al., Superlattices and Microstructures, Vol 23, No 3-4, pp 771-780, 1998
106. F. Assad et al., IEEE Transactions On Electron Devices, Vol 47, No 1, pp 232-240, 2000
107. F. Assad et al., IEDM Technical Digest, pp 5547-550, 1999
108. A.Rinetour et al., IEDM Technical Digest,pp.433-436, Washington(DC), Dec 2003
109. Chi On Chui et al., IEDM Technical Digest, pp.437-440, San Francisco(CA), Dec. 2002
110. Nishitami-Gamo et al., Diamond and Related Materials, 9, pp941-947, 2000
111. Lagrange et al. Carbon, 37, pp. 807-810, 1999
112. Y.Ono et al., IEDM 2001 Tech Digest, pp 367-370, Dec 2001, Washington(DC)
113. S.Tiwari et al., Appl. Phys. Lett. 68, 1377(1996)
114. K.Yano IEDM Tech Digest 1998, pp.107-110, Dec. 1998, San Francisco(CA)
115. A. Fernandes et al., IEDM 2001 Tech Digest, pp 155-158, Dec 2001, Washington(DC)
116. B.de Salvo et al., IEDM Tech Digest 2003, pp. 597-600, Dec. 2003, Washington(DC)
117. G.Molas et al., WODIM 2002, Nov 2002, Grenoble (France)
118. M.Sanquer et al. SNW 2003, pp.70-71 Kyoto (Japan)
119. M.Specht et al. IEDM Tech Digest 1999, pp. 383-341, Dec. 1999, Washington(DC)
120. G.Molas et al., IEDM Tech Digest 2004, pp. 877-880, Dec. 2004, San Francisco(CA)