Sulfur-doped homoepitaxial (001) diamond with n-type semiconductive properties

Diamond and Related Materials

Volumn 9, Issue 3, 2000, Pages 941-947

  Nishitani Gamo, Mikka ^a   Yasu, Eiji ^a,b   Xiao, Changyong ^a   Kikuchi, Yuko ^a   Ushizawa, Koichi ^a   Sakaguchi, Isao ^a   Suzuki, Toshimitsu ^a,c   Ando, Toshihiro ^a,c  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b KUBOTA CORPORATION   (Japan)

^c KANSAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; CARRIER MOBILITY; COMPOSITION EFFECTS; EPITAXIAL GROWTH; HALL EFFECT; HYDROGEN SULFIDE; PHASE TRANSITIONS; SEMICONDUCTING DIAMONDS; SEMICONDUCTOR DOPING;

HOMOEPITAXIAL DIAMONDS;

DIAMOND FILMS;

EID: 0033728746     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00218-1     Document Type: Article

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