65nm physical gate length NMOSFETs with heavy ion implanted pockets and highly reliable 2nm-thick gate oxide for 1.5V operation

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 89-90

  Caillat, C ^a   Deleonibus, S ^a   Guegan, G ^a   Tedesco, S ^a   Dal'zotto, B ^a   Heitzmann, M ^a   Martin, F ^a   Mur, P ^a   Marchand, B ^a   Balestra, F ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRAPOLATION; HEAVY IONS; INTEGRATED CIRCUIT MANUFACTURE; ION BEAM LITHOGRAPHY; ION IMPLANTATION; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; RELIABILITY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SILICON WAFERS; THRESHOLD VOLTAGE;

BORON CHANNEL IMPLANT; GALLIUM POCKETS; GATE OXIDE; INDIUM POCKETS; POLYSILICON GATES;

MOSFET DEVICES;

EID: 0033281013     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)