Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration

Journal of Applied Physics

Volumn 94, Issue 9, 2003, Pages 5732-5741

  Gamiz F ^a   Roldan J B ^a   Godoy, A ^a   Cartujo Cassinello, P ^a   Carceller, J E ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; ELECTRONS; GATES (TRANSISTOR); MONTE CARLO METHODS; POISSON EQUATION; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; WAVE EQUATIONS;

ASYMMETRIC DEVICES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 17144432609     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1615706     Document Type: Article

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