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Volumn 46, Issue 7, 2002, Pages 997-1004

Low Schottky barrier source/drain for advanced MOS architecture: Device design and material considerations

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; HOLE MOBILITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SILICON ON INSULATOR TECHNOLOGY;

EID: 0036642907     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00033-3     Document Type: Conference Paper
Times cited : (47)

References (23)
  • 8
    • 84939180950 scopus 로고
    • SB-IGFET: An insulated-gate field-effect transistor using Schottky barriers contacts for source and drain
    • (1968) Proc IEEE , Issue.AUGUST , pp. 1400-1402
    • Lepselter, M.P.1    Sze, S.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.