Large range of boron doping with low compensation ratio for homoepitaxial diamond films

Carbon

Volumn 37, Issue 5, 1999, Pages 807-810

  Lagrange, J P ^a   Deneuville, A ^a   Gheeraert, E ^a  

^a LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; BORON; CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL IMPURITIES; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRONIC PROPERTIES; SEMICONDUCTING DIAMONDS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SYNTHETIC DIAMONDS;

HOMOEPITAXIAL DIAMOND FILMS;

DIAMOND FILMS;

EID: 0032655851     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0008-6223(98)00275-9     Document Type: Article

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