Impact of few electron phenomena on floating-gate memory reliability

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 877-880

  Molas, G ^a   Deleruyelle, D ^a   De Salvo, B ^a   Ghibaudo, G ^b   Gely, M ^a   Jacob, S ^a   Lafond, D ^a   Deleonibus, S ^a  

^a CEA GRENOBLE   (France)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

70NM NAND FLASH TECHNOLOGY; ELECTRON CAPTURE; FLOATING GATES (FG); POISSON PROCESS; % REDUCTIONS; COLLECTIVE PHENOMENA; DECA-NANOMETER; FLOATING GATE MEMORY; MEMORY RELIABILITY; MEMORY RETENTION TIME; QUANTITATIVE EVALUATION; SINGLE ELECTRON; STOCHASTIC BEHAVIOR; TIME WINDOWS;

CAPACITANCE; COULOMB BLOCKADE; CURRENT DENSITY; DATA STORAGE EQUIPMENT; ELECTRIC CURRENTS; EXTRAPOLATION; GATES (TRANSISTOR); MATHEMATICAL MODELS; POISSON DISTRIBUTION; PROBABILITY; RELIABILITY THEORY; STOCHASTIC PROGRAMMING; RELIABILITY; STOCHASTIC SYSTEMS;

ELECTRON TRANSITIONS; FLASH MEMORY;

EID: 21644487861     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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