A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology

IEEE Transactions on Electron Devices

Volumn 46, Issue 9, 1999, Pages 1912-1914

  Niu, Guofu ^a   Cressler, John D ^a   Mathew, Suraj J ^a   Subbanna, Seshu ^b  

^a AUBURN UNIVERSITY   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

LDD devices; Low temperature operation; Mobility; MOSFET's; Parameter extraction; Semiconductor device modeling

Indexed keywords

ELECTRIC RESISTANCE; GATES (TRANSISTOR); MASKS; SEMICONDUCTOR DEVICE MODELS;

LIGHTLY-DOPED-DRAIN (LDD) DEVICES; TOTAL RESISTANCE SLOPE-BASED METHODS;

CMOS INTEGRATED CIRCUITS;

EID: 0032595354     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.784194     Document Type: Article

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