Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating

IEEE Transactions on Electron Devices

Volumn 45, Issue 3, 1998, Pages 710-716

  Ohguro, Tatsuya ^a   Sugiyama, Naoharu ^a   Imai, Seiji ^a   Usuda, Kouji ^a   Saito, Masanobu ^a   Yoshitomi, Takashi ^a   Ono, Mizuki ^a   Kimijima, Hideki ^a   Momose, Hisayo Sasaki ^a   Katsumata, Yasuhiro ^a   Iwai, Hiroshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Epitaxial si; n MOSFET; Sub O.l m gate

Indexed keywords

ELECTRIC CURRENTS; EPITAXIAL GROWTH; GATES (TRANSISTOR); INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSCONDUCTANCE;

SURFACE DENSITY;

MOSFET DEVICES;

EID: 0032022530     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.661232     Document Type: Article

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