High performance 50 nm PMOSFET using decaborane (B10H14) ion implantation and 2-step activation annealing process

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 471-474

  Goto, Ken ichi ^a   Matsuo, Jiro ^a   Tada, Yoko ^a   Tanaka, Tetsu ^a   Momiyama, Youichi ^a   Sugii, Toshihiro ^a   Yamada, Isao ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DECABORANE ION IMPLANTATION; TWO STEP ACTIVATION ANNEALING PROCESS; ULTRASHALLOW JUNCTIONS;

ACTIVATION ANALYSIS; ANNEALING; BORON COMPOUNDS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ION IMPLANTATION; LOW TEMPERATURE OPERATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; THERMAL DIFFUSION IN SOLIDS;

MOSFET DEVICES;

EID: 84886448123     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)