55nm high mobility SiGe(:C) pMOSFETs with HfO2 gate dielectric and TiN metal gate for advanced CMOS

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2004, Pages 42-43

  Weber, O ^a,b   Ducroquet, F ^a,b   Ernst, T ^a   Andrieu, F ^a   Damlencourt, J F ^a   Hartmann, J M ^a   Guillaumot, B ^c   Papon, A M ^a   Dansas, H ^a   Brevard L ^a   Toffoli, A ^a   Besson, P ^c   Martin, F ^a   Morand, Y ^c   Deleonibus, S ^a  

^a CEA LETI   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c STMICROELECTRONICS   (France)

Author keywords

High k; pMOSFET; SiGe(:C) and Metal Gate

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; ELECTRON MOBILITY; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; QUANTUM THEORY; SILICA; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); METAL GATES; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION (RPCVD); SACRIFICIAL SILICON LAYERS;

MOSFET DEVICES;

EID: 4544382134     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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