Shallow source/drain extensions for pMOSFETs with high activation and low process damage fabricated by plasma doping

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 475-478

  Takase, Michihiko ^a   Yamashita, Kyoji ^a   Hori, Atsushi ^a   Mizuno, Bunji ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA DOPING; SHALLOW SOURCE/DRAIN EXTENSIONS;

ACTIVATION ENERGY; ELECTRIC RESISTANCE; ION IMPLANTATION; PLASMA APPLICATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 84886448083     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)