Interaction of point defects with dislocations in silicon and germanium: Electrical and optical effects

Solid State Phenomena

Volumn 85-86, Issue , 2002, Pages 67-144

  Schröter, Wolfgang ^a   Cerva, Hans ^b  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

Dangling bonds; Decoration; Dislocations; DLTS; EBIC; EPR; Luminescence; Reconstruction; Silicon devices; Stacking faults; TEM

Indexed keywords

ATOMIC PHYSICS; ATOMIC SPECTROSCOPY; ATOMS; AUGER ELECTRON SPECTROSCOPY; CHARGED PARTICLES; COMPUTER NETWORKS; CRYSTAL ATOMIC STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECT DENSITY; DEFECT STRUCTURES; DEFECTS; ELECTRIC CURRENTS; ELECTRIC EXCITATION; ELECTRON BEAMS; ELECTRON MICROSCOPES; ELECTRON MICROSCOPY; ELECTRON OPTICS; ELECTRONIC STRUCTURE; ELECTRONS; EMBEDDED SYSTEMS; ENERGY STORAGE; FLOW INTERACTIONS; GALVANOMAGNETIC EFFECTS; GERMANIUM; HALL EFFECT; IMAGING TECHNIQUES; MAGNETIC FIELD EFFECTS; MICROFLUIDICS; MICROSCOPIC EXAMINATION; NONMETALS; OPTICAL PROPERTIES; OPTICAL SYSTEMS; PARTICLE BEAMS; PHOTOACOUSTIC EFFECT; PLASMA DIAGNOSTICS; POINT DEFECTS; SEMICONDUCTING CADMIUM TELLURIDE; SILICON; SPECTRUM ANALYSIS; SPIN DYNAMICS; TRANSMISSION ELECTRON MICROSCOPY;

(100) SILICON; (P ,P ,T) MEASUREMENTS; BAND GAPS; BASIC CONCEPTS; DEEP LEVELS; DEFECT INTERACTIONS; DEFECT LEVEL (DL); DEFECT PHYSICS; DENSITY OF STATES (DOF); DISLOCATION (MOBILITY); ELECTRICAL AND OPTICAL PROPERTIES; ELECTRON SPIN RESONANCE (ESR); ELECTRON-BEAM-INDUCED CURRENT (EBIC); ELECTRONIC DEVICES; EXPERIMENTAL DATA; INDIVIDUAL (PSS 544-7); LARGE SYSTEMS; MAIN FACTORS; OPEN PROBLEMS; OPTICAL EFFECTS; SMALL SYSTEMS; STRUCTURAL FEATURES; THEORETICAL CALCULATIONS; TRANSIENT SPECTROSCOPY;

ELECTRON SPIN RESONANCE SPECTROSCOPY;

EID: 24444470039     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

References (285)

1. P. Haasen and A. Seeger in "Halbleiterprobleme IV", ed. W. Schottky, Vieweg Braunschweig (1958), p.68
2. R. Jones, Materials Science and Engineering B71, 24 (2000)
3. F. Seitz, Phys. Rev. 88, 722 (1952)
4. I. L. F. Ray and D. J. H. Cockayne, Phil. Mag. 22, 853 (1970)
5. I. L. F. Ray and D. J. H. Cockayne, J. Microsc. 98, 170 (1973)
6. H. Gottschalk, G. Patzer, and H. Alexander, phys. stat. sol. (a) 45, 207 (1978)
7. F. Louchet and J. Thibautl-Desseaux, Revue Phys. Appl. 22, 207 (1987)
8. J. F. Justo, M. de Konig, W. Cai, V. V. Bulatow, Phys. Rev. Lett. 84, 2172 (2000)
9. W. Shockley, Phys. Rev 91, 228 (1953)
10. H. Alexander and H. Teichler in: Materials Science and Technology, ed. by R. W. Cahn, P. Haasen, and E. J. Kramer, VCH Weinheim (1991), volume 4. ed. by W. Schröter, p. 249
11. S. T. Pantelides, Phys. Rev. Lett. 57, 2979 (1986)
12. Y, Bar-Yam and J. D. Joannopoulos, Phys. Rev. Lett. 56, 2203 (1986)
13. M. Stutzmann and D. K. Biegelsen, Phys. Rev. Lett. 60, 1682 (1988)
14. S. Pantelides, Phys. Rev. Lett. 60, 1683 (1988)
15. see e.g. P. A Fedders and A. E. Carlsson, Phys. Rev. B 39, 1134 (1989);
16. In-Ho Lee and K. J. Chang, Phys. Rev. B 50, 18083 (1994)
17. P. M. Chaikin and T. C. Lubensky, Pinciples of condensed matter physics, Cambridge University Press 1995, p. 503
18. N. Lehto, S. Marklund, and W. Yong-Liang, Sol. State Comm. 92, 987 (1994)
19. N. Lehto and S. Oeberg, Phys. Rev. Lett. 80, 5568 (1998)
20. H. Alexander and H. Teichler: "Dislocations" in: Handbook of Semiconductor Technology, ed. K. A. Jackson and W. Schröter, WILEY-VCH Weinheim, vol. 1, p.291 (2000)
21. R. Jones, J. de Phys. 40, C6-33 (1979)
22. S. Marklund, phys. stat. sol. (b) 92, 83 (1979)
23. J. E. Northrup, M. L. Cohen, J. R. Chelikowsky, J. C. H. Spence, and A. Olsen, Phys. Rev. B24, 4623 (1981)
24. Y.-L. Wang and H. Teichler, phys. stat. sol. (b) 154, 649 (1989)
25. H. Veth and H. Teichler, Phil. Mag. B49, 371 (1984)
26. K. W. Lodge, A. Lapiccirella, C. Battistoni, S. L. Altmann, and N. Tomassini, Phil. Mag. A 60, 643 (1989)
27. M. S. Duesbery, B. Joos, and D. J. Michel, Phys. Rev. B43, 5143 (1991)
28. J. R. K. Bigger, D. A. Mclnnes, A. P. Sutton, M. C. Payne, I. Stich, R. D. King-Smith, D. M. Bird, and L. J. Clarke, Phys. Rev. Lett. 69, 2224 (1992)
29. L. B. Hansen, K. Stockbro, B. I. Lundqvist, K. W. Jacobsen, and D. M. Deaven, Phys. Rev. Lett. 75, 4444 (1995)
30. J. Bennetto, R. W. Nunes and D. Vanderbilt, Phys. Rev. Lett. 79, 245 (1997)
31. K. Wessel and H. Alexander, Phil. Mag. 35, 1523 (1977)
32. L. F. Mattheiss and J. R. Patel, Phys. Rev. B23, 5384 (1981)
33. S. Marklund, phys. stat. sol. (b) 108, 97 (1981)
34. N. Lehto, S. Marklund, and W. Yong-Liang, Solid State Comm. 92, 987 (1994)
35. N. Lehto, Phys. Rev. B55, 15601 (1997)
36. D. Gilles, W. Schröter, and W. Bergholz, Phys. Rev. 41, 5770 (1990-II)
37. D. Mergel and R. Labusch, phys. stat. sol. (a) 41, 431 (1977);
38. (a) 42, 165 (1977)
39. H. Sakaki, Jpn. J. Appl. Phys., Part 1 19, 94 (1980)
40. L. D. Landau, Sov. Phys. JETP 3, 920 (1957)
41. S. Tomonaga, Prog. Theor. Phys. 5, 544 (1950)
42. J. M. Luttinger, J Math. Phys. 4, 1154 (1963)
43. A. Yacoby, H. L. Störnier, K. W. Baldwin, L. N. Pfeiffer, and K. N. West, Solid State Commun. 101, 77 (1997)
44. J.-S. Lee, H. Ishiki, T. Sugano, and Y. Aoyagi, J. Cryst. Growth 173, 27 (1997)
45. M. Bockrath, D. H. Cobden, P. L. McEuen, N. G. Chopra, A. Zettl, A. Thess, and R. E. Smalley, Science 275, 1922 (1997)
46. S. J. Tans, M. H. Devoret, H. Dai, A. Thess, R. E. Smalley, L. J. Geerligs, and C. Dekker, Nature (London) 386, 474 (1997)
47. M. Bockrath, D. H. Cobden, J. Lu, A. G. Rinzler, R. E. Smalley, L. Balents, and P. L. McEuen, Nature (London) 297, 598 (1999)
48. O. M. Auslaender, A. Yacobym R. de Picciotto, K. W. Baldwin, L. N. Pfeiffer, and K. W. West, Phys. Rev. Lett. 84, 1764 (2000)
49. S. N. Evangelou, J. Phay C 19, 4291 (1986)
50. K. Nikolic and A. Mackinnon, Phys. Rev. B 47, 6555 (1993)
51. J. P. G. Tayler, K. J. Hugill, D. D. Vvedenskym and A. MacKinnon, Phys. Rev. Lett. 67, 2359 (1991)
52. F. Riedel and W. Schröter, Phys. Rev. B 62, 7150 (2000-I)
53. R. Landauer, Phys. Rev. 94, 1386 (1954)
54. V. Celli, A. Gold, and R. Thomson, Phys. Rev. Lett. 8, 96 (1962)
55. H. Teichler, Inst. Phys. Conf. Ser. 23, 374 (1975)
56. S. Winter, phys. stat. sol. (b) 90, 289 (1978)
57. H. Teichler, J. de Physique 40, C6-43 (1979)
58. V. L. Bonch-Bruevich and V. B. Glasko, Soviet Phys.-Solid State 3, 26 (1961)
59. E. O. Kane, Phys. Rev. 131, 79 (1963)
60. V. L. Bonch-Bruevich, Soviet Phys.-Solid St. 4, 1953 (1963)
61. T. N. Morgan, Phys. Rev. 139, A 343 (1965)
62. G. Theodorou, "Band strcuture and bandgaps in strained bulk c-Si" in: Properties of Crystalline Silicon, ed. R. Hull, emis DATAREVIEWS Ser. 20, 402 (1999)
63. W. Keyes, Solid State Physics 11, 149 (1960)
64. D. D. NoIte, W. Walukiewicz, and E. E. Haller, Phys. Rev. B 36, 9374 (1987)
65. H. Feichtinger. "Deep Centers in Semiconductors" in: Handbook of Semiconductor Technology, ed. K. A. Jackson and W. Schröter, WILEY-VCH Weinheim, vol. 1, p. 167 (2000)
66. W. Jantsch, K. Wünstel, O. Kumagai, and P. Vogl, Physica 117B&118 188 (1983)
67. H. Feichtinger and T. Prescha, Mat. Science Forum 38-41, 427 (1989)
68. G. A. Samara and C. E. Barnes, Phys. Rev. B 35, 7575 (1987-I)
69. D. Wieder, M. Scheffler, and U. Scherz, Mat. Science Forum 38-41, 299 (1989)
70. R. Bullough and R. C. Newman, Progress in Semiconductors 7, 101 (1963)
71. W. Schröter, Michael Seibt, and Dieter Gilles:"High-Temperature Properties of transition elements in silicon" in: Handbook of Semiconductor Technology, ed. K. A. Jackson and W. Schröter, Wiley-VCH Weinheim 2000, vol. 1, 597
72. J. Utzig, J. Appl. Phys. 65, 3868 (1989)
73. W. T. Read, Phil. Mag. 45, 775 (1954) and 45, 1119 (1954)
74. R. M. Broudy and J. W. McClure, J. appl. Phys. 31, 1511 (1960)
75. W. Schröter and R. Labusch, phys. stat. sol. 36, 539 (1969)
76. R. Labusch and W. Schröter, in: Dislocations in Solids, ed. by F. N. R. Nabarro, North Holland Publ. Co., Amsterdam 1978, vol. 5, 127
77. V. Veth and M .Lannoo, Phil Mag. B 50, 93 (1984)
78. G. L. Pearson, W. T. Read, and F. J. Morin, Phys. Rev. 93, 666 (1954)
79. R. A. Logan, G. L. Pearson, and D. A. Kleinmann, J. Appl. Phys. 30, 885 (1959)
80. B. Pödör, Acta phys. Hungar. 23, 393 (1967)
81. J. H. P. van Weeren, R. Struikmans, G. Koopmans, and J. Blok, phys. stat. sol. 27, 225 (1968)
82. W. Schröter, phys. stat. sol. 21, 211 (1967)
83. Yu. A. Ossipyan and S. A. Shevchenko, Sov. Phys.-JETP 38, 345 (1974)
84. R. Labusch and R. Schettler, phys. stat. sol. (a) 9, 455 (1972)
85. R. Wagner and P. Haasen, Inst. Phys. Conf. Ser. 23, 387 (1975)
86. R. Wagner, phys. stat. sol. (a) 24, 575 (1974)
87. F. D. M. Haldane and P. W. Anderson, Phys. Rev. B 13, 2553 (1976)
88. K. D. Usadel and W. Schröter, Phil. Mag. B 37, 217 (1978)
89. U. Del Penino and S. Mantovani, phys. stat. sol. (a) 38, 109 (1976)
90. P. W. Anderson, Phys. Rev. 124, 41 (1961)
91. H. Weber, W. Schröter, and P. Haasen, Helv. Phys. Acta 41, 1255 (1968)
92. R. Labusch and W. Schröter, Inst. Phys. Conf. Ser. 23, 56 (1975)
93. V. A. Grazhulis, V. V. Kveder, and V. Yu. Mukhina, phys. stat. sol. (a) 43, 407 (1977)
94. H. Ono and K. Sumino, Japanese J. Appl. Phys. 19, L629 (1980)
95. H. Ono and K. Sumino, J. Appl. Phys. 54, 4426 (1983)
96. D. Mergel and R. Labusch, phys. stat. sol. (a) 69, 151 (1982)
97. E. B. Yakimov, V. G. Eremenko, and V. I. Nikitenko, Soviet Phys. Semicond. 10, 231 (1976)
98. D. Lépine, V. A. Grazhulis, and D. Kaplan, Proc. Phys. Semicond., ed. F. G. Fumi, North Holland Publ. (1976)
99. H.-J. Kos and D. Neubert, phys. stat. sol. (a) 44, 259 (1977)
100. A. Cavallini, P. Gondi, and A. Castaldini, phys. stat. sol. (a) 43, K205 (1977)
101. M. Albers, A. Gabriel, and W. Schroeter, Inst. Phys. Conf. Ser. 31, 509 (1977)
102. E. Weber and H. Alexander, J. Physique 40, C6-101 (1979)
103. V. A. Grazhulis, V. V. Kveder, and Yu. A. Osip yan, phys. stat. sol. 33, 623 (1971)
104. L. C. Kimerling and J.R. Patel, Appl. Phys. Lett. 34, 73 (1979)
105. W. Schröter, E. Scheibe, and H. Schoen, J. Microscopy 118, 23 (1980)
106. H. Schoen, Thesis Goettingen 1979
107. S. A. Shevchenko, 1.1. Khodos, and 1.1. Snighireva, phys. stat. sol. (a) 91, 523 (1985)
108. F. H. Baumann and W. Schröter, Phil. Mag. B 48, 55 (1983)
109. F. H. Baumann and W. Schröter, phys. stat. sol. (a) 79, K123 (1983)
110. D. V. Lang, J. Appl. Phys. 45, 3014 (1974)
111. W. Schröter, J. Kronewitz, U. Gnauert, F. Riedel, and M. Seibt, Phys. Reb. B 52, 13726 (1995)
112. T. Figielski, phys. stat. sol. (a) 121, 187 (1990)
113. W. Schröter, I. Queisser, and J. Kronewitz, Inst. Phys. Conf. Ser 104, 75 (1989)
114. A. Sattler, H. Hedemann,. A. Istratov, M. Seibt, and W. Schröter, Solid State Phenomena 63-64, 369 (1998)
115. H. Hedemann and W. Schröter, Solid State Phenomena 57-58, 293 (1997)
116. J. Kronewitz, Diploma thesis, Göttingen 1986
117. H. Hedemann and W. Schröter, J. Phys. III France 7, 1389 (1997)
118. P. Omling, E. R. Weber, L. Montelius, H. Alexander, and J. Michel. Phys. Rev. B 32, 6571 (1985)
119. J. Kronewitz, Thesis Goettingen 1991
120. H. Hedemann and W. Schröter, J. Phys. III France 7, 1389 (1997)
121. L. C. Kimerling and J. Patel, Appl. Phys. Lett. 34, 73 (1979)
122. J. R. Patel, L. Testardi, and P. E. Freeland, Phys. Rev. B 13, 3548 (1977)
123. C. Kisielowski-Kemmrich, E. Weber, and H. Alexander, J. electronic Mater. 14a, 387 (1985)
124. W. Szielko, O. Breitenstein, and R. Pickenhein, Crystal Res. and Techn. 16, 197 (1981)
125. J. R. Patel and L. C. Kimerling, J. Physique 40, C6-67 (1979)
126. V. V. Kveder, Yu. A. Ossipyan, W. Schröter, and G. Zoth, phys stat. sol. (a) 72, 701 (1982)
127. L. C. Kimerling, J. R. Patel, J. L. Benton, and P. E. Freeland, Inst. Phys. Conf. Ser. 59, 401 (1981)
128. J. R. Patel and L. C. Kimerling, MRS Symposia Proc. 2, 273 (1981)
129. P. Omling, E. R. Weber, L. Montelius, H. Alexander, and J. Michel, Phys. Rev. B 32, 6571 (1985)
130. K. Wessel and H. Alexander, Phil. Mag. 35, 1523 (1977)
131. D. Cavalcoli, A. Cavallini, and E. Gombia, J. Phys. III France 7, 2361 (1997)
132. D. Cavalcoli, A. Cavallini, and E. Gombia, Phys.Rev. B 56, 10208 (1997)
133. J. Kronewitz and W. Schröter, Izv. Akad. Nauk SSSR, Ser. Fiz 51, 682 (1987)
134. [Bull. Acad. Sci. USSR, Phys. Ser. 51, 51 (1987)]
135. D. Cavalcoli. A. Cavallini, and E. Gombia, J. Phys. III France 7, 1399 (1997)
136. A. Cavallini, private communication
137. A. Birkner, diploma thesis,. Köln 1994
138. O. V. Kononchuk, V. V. Nikitenko, V. I. Orlov, and E. B. Yakimow, phys. stat. sol. (a) 143, K5 (1994)
139. O. Kononchuk, V. Orlov, O. Feklisova, and E. Yakimov, Sol. St. Phenomena 51-52, 15 (1996)
140. L.E. Bondarenko, V. G. Eremenko, V. I. Nikitenko, and E. B. Yakimov, phys. stat. sol. (a) 60, 341 (1980)
141. K. Knobloch, Thesis Cottbus, 1997
142. J. Kronewitz, Thesis Goettingen 1991
143. D. L. Dexter and F. Seitz, Phys. Rev. 86, 964 (1952)
144. H. Lemke, phys. stat. sol. (a) 65, 389 (1981)
145. H. Ono and K. Sumino, J. Appl. Phys. 57, 287 (1985)
146. C. Kisielowski and E. R. Weber. Phys. Rev. B 44, 1600 (1991)
147. K. Knobloch and H. Alexander.Mat. Sci. Eng. B 42, 63 (1996)
148. O. Konunchuk. V. Orlov, O. Feklisova. and E. Yakimov, Solid State Phenomena 51-52, 15 (1996)
149. J. Bourgoin and M. Lannoo, Point Defects in Semiconductors II, Springer Verlag 1983, p. 52 ff
150. C. Kisielowski, J. Palm, B. Bollig, and H. Alexander, Phys. Rev. B 44, 1588 (1997)
151. C. Kisielowski and E. R. Weber, Phys. Rev. B 44, 1600 (1997)
152. G. Csányi. S. Ismail-Beigi, and T. Arias, Phys. Rev, Lett. 80, 3984 (1998)
153. H. Alexander, R. Labusch, and W. Sander, Solid State Comm. 3, 357 (1965)
154. F. D. Wöhler. H. Alexander, and W. Sander. J. Phys. Chem, Solids 31, 1381 (1970)
155. V. A. Grazhulis and Yu. A. Osip'yan, Sov. Phys. JETP 31, 677 (1970)
156. U. Schmidt, E. Weber, H. Alexander, and W. Sander, Sol. State Comm. 14. 735 (1974)
157. E. Weber and H. Alexander, J. Physique 40, C6-101 (1979)
158. L. Bartelsen, phys. stat. sol. (b) 81, 471 (1977)
159. C. Kisielowki-Kemmerich, J. Czaschke, and H. Alexander, Electronic Mat. 14a, 387 (1985)
160. E. Weber and H. Alexander, Inst. Phys. Conf. Ser. 23, 433 (1977)
161. M. Suezawa, K. Sumino, and M Iwaisumi, Inst. Phys. Conf. Ser. 59, 407 (1981)
162. R. Erdmann and H. Alexander, phys. stat. sol. (a) 55, 251 (1979)
163. J. Bourgoin and M. Lannoo, Point Defect in Semiconductors II, Springer Verlag Berlin, Heidelberg, New York 1983, p. 64 and 74ff
164. Y. A. Osipyan. Sov. Scient. Rev., Sect. 4a, ed. J. M. Khalatnikov, p. 219
165. H. Alexander in: Dislocations in Solids, ed. F. N. R. Nabarro, North Holland, Amsterdam (1986), vol. 7, 113
166. G. D. Watkins and J. W. Corbett. Phys. Rev. A 134, 1359 (1964)
167. C. Kisielowski-Kemmerich, phys stat. sol. (b) 161, 11 (1990)
168. C. Ksielowski-Kemmerich, E. Weber, and H. Alexander, J. Electron. Mat. 14a, 387 (1985)
169. K. L. Brown, Phys. Rev. B 14, 872 (1975)
170. V. V. Kveder, private communication
171. V. A. Grazhulis, V. V. Kveder, and Yu. A. Ossipyan, phys. stat. sol. (b) 103, 519 (1981)
172. th Int. Conf. on Physics of Semiconductors, North-Holland, Amsterdam 1976, p. 1081
173. N. Lehto and S. Öberg, Phys. Rev B 56, R12706 (1997)
174. N. A. Drozdov, A. A. Patrin, and V. D. Tkachev, Sov. Phys. JETP Lett. 23, 597 (1976)
175. N. A. Drozdov, A. A. Patrin, and V. D. Tkachev, Phys. stat. sol. (b) 83, K137 (1977)
176. H. Alexander, C. Kisielowski-Kemmerich, and E. R. Weber, Physica 116B, 583 (1983)
177. R. H. Uebbing, P. Wagner, H. Baumgart, and H. J. Queisser, Appl. Phys. Lett. 37, 1078 (1986)
178. M. Suezawa and K. Sumino, phys. stat. sol. (a) 78, 639 (1983)
179. M. Suezawa, Y. Sasaki, Y. Nishina. and K. Sumino, Jpn. J. Appl. Phys. 20, L537 (1981)
180. K. Weronek, Thesis Stuttgart 1992
181. J. Weber, Solid State Phenomena 37-38, 13 (1994)
182. A. N. Izotov and E. A. Shteinman, Sov. Phys. Solid State 28, 567 (1986)
183. M. Suezawa, K. Sumino, and Y. Nishina, Jpn. J. Appl. Phys. 21, L518 (1982)
184. M. Suezawa and K. Sumino, J. Physique 44, C4-133 (1983)
185. R. Sauer, J. Weber, J. Stolz, E.R. Weber, K.-H. Küsters, and H. Alexander, Appl. Phys. A 36, 1 (1985)
186. A. A. Kaplyanskii, Opt. Spectrosc. 16, 329 (1964)
187. T. Sekiguchi and K. Sumino, J. Appl. Phys. 79, 3253 (1996)
188. V. Higgs, E.C. Lightowlers, C.E. Norman, and P.C. Kightley, Mater. Sci. Forum 83-87, 1309 (1992)
189. R. Sauer, Ch. Kisielowski-Kemmerich, and H. Alexander, Phys. Rev. Lett. 57, 1472 (1986)
190. K. Wessel and H. Alexander, Phil. Mag. 35, 1523 (1977)
191. U.O. Ziemelis and R.R. Parsons, Can. J. Phys. 59, 784 (1981)
192. V. Higgs, E. C. Lightowlers, G. Davies, F. Schaffler, and E. Kasper, Semicond. Sci. Technol. 4, 593 (1989)
193. V. Higgs, E.C. Lightowlers, and P. Kightley, Mat. Res. Soc. Symp. Proc. 163, 57 (1990)
194. K. Weronek, J. Weber, and R. Buchner in: Polycrystalline Semiconductors, ed. J.H. Werner and H.P. Strunk, Springer-Verlang Berlin, Heidelberg, vol. 54, 50 (1991)
195. V. Kveder, private communication
196. J. Weber and M. I. Alonso, Defect Control in Semiconductors, ed. K. Sumino, Elsevier Science Publishers B.V., North Holland 1990, p. 1453
197. K. Weronek, J. Weber, A. Hopner, F. Ernst, R. Buchner, M. Stefaniak, and H. Alexander, Metr. Sci. Forum 83-87, 1315 (1992)
198. V. V. Kveder, A. I. Shalynin, E. A. Steinman, and A. N. lzotov, Solid State Phenomena 57-58, 299 (1997)
199. Yu.S. Lelikov, Yu.T. Rebane, and Yu.G. Shreter, Inst. Phys. Conf. Ser. 104, 119 (1989)
200. Yu.T. Rebane and Yu.G. Shreter, Polycryst. Semicond. II, ed. J.H. Werner amd H.P. Strunk, Springer-Verlag, Berlin/Heidelberg/New York, 1990, p.28
201. Yu.S. Lelikov, Yu.T. Rebane, S. Ruvimov, A.A. Sitnikova, D.V. Tarhin, and Yu.G. Shreter, phys. stat. sol. (b) 172, 53 (1992)
202. V. Kveder, T. Sekiguchi, and K. Sumino, Phys. Rev. 51, 16721 (1995)
203. V.V. Kveder, E.A. Steinman, S.A. Shevchenko, and H.G. Grimmeiss, Phys. Rev. B 51, 10520 (1995)
204. V.V. Kveder, E.A. Steinman, and H.G. Grimmeiss, Sol. St. Phenomena 47-48, 419 (1996)
205. C. Donolato, Optil 52, 19 (1978/79)
206. C. Donolato in: Point and Extended Defects in Semiconductors, ed. G. Benedek, A Cavallini, and W. Schröter, NATO ASI Series B, Physics vol. 202, 225 (1989)
207. L. Pasemann, Ultramicroscopy 6, 237 (1981)
208. S. R. Morrison, Phys. Rev 104, 619 (1956)
209. T. Figielski, Solid-State Electron. 21, 1403 (1978)
210. Yu.V. Gulyaev, Sov. Phys. Solid State 4, 941 (1962)
211. E.B. Sokolova, Sov. Phys. Solid State 3, 1266 (1970)
212. W. Schröter, phys. stat. sol. (a) 19, 159 (1973)
213. V. B. Shikin and N. I. Shikina, phys. stat. sol. (a) 108, 669 (1988)
214. R. Labusch and J. Hess, phys. stat. sol. (a) 146, 145 (1994)
215. L. C. Kimerling, H. J. Leamy, and J. R. Patel, Appl. Phys. Lett. 30, 217 (1977)
216. A. Ourmazd, Cryst. Res. Techn. 16, 137 (1981)
217. V. Kveder, M. Kittler, and W. Schröter, Phys. Rev. B 63, 115208 (2001)
218. I. Bondarenko. A. Castaldini, and A. Cavallini, phys. stat. sol. (a) 137, 411 (1993)
219. V. L. Bonch-Bruevich and V. B. Glasko, Fiz. Tverd. Tela (Leningrad) 3, 36 (1961)
220. [Sov. Phys. Solid State 3, 36 (1961)]
221. P. R. Wilshaw and G. R. Booker, Inst. Phys. Conf. Ser. 76, 329 (1985)
222. P. R. Wilshaw, T. S. Fell, and G. R. Booker in Point and Extended Defects in Semiconductors, ed. G. Benedek, A. Cavallini, and W. Schröter, NATO ASI-Series B, Physics vol. 202, 243 (1989)
223. M. Kittler, J. Lärz, M. Seibt, and W. Schröter, Appl. Phys. Lett. 58, 911 (1991)
224. I. Bondarenko, A. Castaldini, and A. Cavallini, phys. stat. sol. (a) 137, 411 (1993)
225. M. Kittler, C. Ulhaq-Bouillet, and V. Higgs, J. Appl. Phys. 78, 4573 (1995)
226. V. Higgs and M. Kittler, Appl. Phys. Lett. 65, 2804 (1994)
227. M. Kittler and W. Seifert, Scanning 15, 316 (1993)
228. M. Kittler and W. Seifert, Mat. Sci. Engin. B42, 8 (1996)
229. O. Krüger, W. Seifert, M. Kittler, A. Gutjahr, M. Konuma, K. Said, and J. Poortmans, Solid State Phenomena 63-64, 105 (1998)
230. S. Kunanagi, T. Sekiguche, B. Shen, and K. Sumino, Mater. Sci. Technol. 11, 685 (1995)
231. B. Shen, T. Sekiguchi, and K. Sumino, Jpn. J. Appl. Phys. 35, 3301 (1996)
232. M. Kittler and W. Seifert, Mat. Sci. Engin. B24, 78 (1994)
233. S. Kusanagi, T. Sekiguchi, B. Shen, and K. Sumino, Mat. Sci. Technology 11, 685 (1995)
234. M. Kittler, C. Ulhaq-Bouillet, and V. Higgs, Mater. Sci. Forum 196-201, 383 (1995)
235. K. Knobloch, M. Kittler, W. Seifert, J. Simon, and I. Perichaud, Sol. St. Phenom. 63-64, 105 (1998)
236. V. Kveder, M. Kittler, and W. Schröter, Phys. Rev. B 63, 115208 (2001)
237. J. L. Farvacque, Mater. Sci. Eng. B 42, 110 (1996)
238. B.O. Kolbesen and H.P. Strunk, in "VLSI Electronics: Microstructure Science", 12, (1985), p. 143, Academic Press.
239. B.O. Kolbesen and H.P. Strunk, Inst.Phys.Conf.Ser. 57, 21(1981)
240. H.R. Huff and F. Shimura, Solid State Technology, March (1985), p. 103.
241. B. Leroy, in "Instabilities in Silicon Devices: Silicon Passivation and Related Instabilities", Eds. G. Barbottin, A. Vapaille, Elsevier Science Publishers, (1986), p. 155.
242. B.O. Kolbesen, W. Bergholz, H. Cerva, F. Gelsdorf, H. Wendt, G. Zoth, Inst.Phys.Conf.Ser. 104, 421(1989)
243. B.O. Kolbesen, H. Cerva, F. Gelsdorf, G. Zoth, and W. Bergholz, in "Defects in Silicon II", Eds. W.M. Bullis, U. Gösele, F. Shimura, The Electrochemical Society Proc. 91-9, 371 (1991)
244. C. Clayes, E. Simoen, J. Vanhellemont, Nucl.Inst.Meth.Phys.Res. A377, 244 (1996)
245. D.B. Holt, Scanning Microscopy 10, 1047 (1996)
246. A. Y. Liang and C.J. Varker, in "LifetimeFactors in Silicon" Am.Soc.Test.Mater., Special Technical Publication 712, Philadelphia, Pennsyslvania (1980), p.73
247. C.J. Varker and K.V. Ravi, J.Appl.Phys. 45, 272 (1974)
248. D. Kranzer, R. Lemme, B.O. Kolbesen, K.R. Mayer, H. Strunk, Revue de Physique Applique, 13, 803 (1978)
249. H. Strunk, U. Gösele, and B.O. Kolbesen, Appl. Phys. Lett. 34, 530 (1979)
250. H. Cerva, Defect and Diffusion Forum, 148-149, 104(1997)
251. Y.E. Hong, A. Keshavarzi, M.T.W. Tay, in the Proc. of the SPIE - The International Society for Optical Engineering - SPIE-Int. Soc. Opt. Eng. 2874, 232 (1996)
252. W.K. Tice, J. Electrochem. Soc., 136, 1572(1989)
253. G. Rozgonyi, Electrochemical Society Proc., 98-1, 279(1998)
254. G. Chang, R. Ai, H.-D. Chiou, Electrochemical Society Proc., 97-12, 123 (1997)
255. nd Int. Symp. on Plasma Process-Induced Damage, May 13-14, Monterey, CA, American Vacuum Soc. (1997), p. 85.
256. J.B. Lasky, J. Appl. Phys. 54, 6009(1983)
257. K. Ryoo, R. Drosd, W. Wood, J.Electrochem.Soc., 136, 768 (1989)
258. H. Cerva and W. Bergholz, J.Electrochem.Soc., 140, 780 (1993)
259. A.S.M. Salih, Mat.Res.Soc.Symp.Proc. 221, 375 (1991)
260. F.M. Ross, R. Hull, D. Bahnck, J.C. Bean, L.J. Peticolas, and C.A. King, Appl. Phys. Lett. 62, 1426 (1993)
261. G.R. Booker, A. Ourmazd, D.B. Darby, Journal de Physique, 40, colloque C-6, C6-19 (1979)
262. K.V. Ravi, C.J. Varker, C.E. Volk, J.Electrochem.Soc., 120, 533 (1973)
263. H. Strack, K.R. Mayer and B.O. Kolbesen, Solid-State Electronics, 22, 135 (1979)
264. Y. Ichida, T. Yanada, S. Kawado, in "Lifetime Factors in Silicon", Am.Soc.Test.Mater., Special Technical Publication 712, Philadelphia, Pennsyslvania (1980), p. 107
265. C.L. Claeys, E.E. Laes, G.J. Declerck and R.J. Van Overstraeten, in "Semiconductor Silicon/1977", Eds. H.R. Huff and E. Sirtl, The Electrochemical Society Proc., Pennington, New Jersey, (1977), p. 773
266. B. Fiegel and G. Zoth in "Crucial Issues in Semiconductor Materials and Processing Technologies", S. Coffa, F. Priolo, E. Rimini, and J.M. Poate (eds), Erice/Italy, July 1991, Kluwer Acad. Publ. Dordrecht, The Netherlands, NATO ASI Series, Vol. 222. p. 129
267. P.S.D. Lin, R.B. Marcus, T.T. Sheng, J.Electrochem.Soc., 130, 1878 (1983)
268. W. Bergholz, W. Mohr, W. Drewes, H. Wendt, Mater.Sci.Engin., B 4, 359 (1989)
269. J. Vanhellemont, E. Simoen, A. Kaniava, M. Libezny, C. Claeys, J. Appl. Phys. 77, 5669 (1995)
270. P. Restle, A. Gnudi, IBM J. Res. Develop., 34, 227 (1990)
271. E. Simoen, J. Vanhellemont, C. Claeys, Solid State Phenomena, 47-48, 403 (1996)
272. H. Mikoshiba, N. Nishio, T. Matsumoto, H. Kikuchi, T. Kitano and H. Kaneko, Mat. Res. Soc. Symp. Proc. 262, 629 (1992)
273. J.-G. Park, Y.-S. Kwak, C.-S. Lim, K.D. Kwack, S. Hahn, Electrochemical Society Proc., 99-9, 601(1991)
274. S.S. Kim, W. Wijaranakula, J. Electrochem. Soc., 141, 1872 (1994);
275. 142, (1995);
276. 142, 3534 (1995)
277. B. Leroy, J. Phys. III France, 5, 1307 (1995)
278. Yu. A. Ossipyan, J. Phys. France, colloque 44, C4-103 (1983)
279. D.S. Yaney, C.Y. Lu, R.A. Kohler, M.J. Kelly, J.T. Nelson, IEDM Technical Digest (1987), p. 336.
280. P.J. Restle, J.W. Park, B.F. Lloyd, IEDM Technical Digest (1992), p. 807
281. W. Bergholz and D. Gilles, phys. stat. sol. (b) 222, 5 (2000)
282. H. Cerva, E. Hammerl, R. Lemme, U. Schwalke, K. Wangemann, G. Zoth, in "Defects in Silicon III", Eds. T. Abe, W.M. Bullis, S. Kobayashi, W. Lin, P. Wagner, The Electrochemical Society Proc. 99-1. 55 (1999)
283. H. S. Leipner, C. Hübner, T. E. M. Staab, M. Haugk, and R. Krause-Rehberg, phys. stat. sol. (a) 171, 377 (1999)
284. S. K. Estreicher, J. L. Hastings, and P. A. Fedders, Appl. Phys. Lett. 70, 432 (1997)
285. R. Jones, B. J. Coomer, J. P. Goss, S. Öberg, and P. R. Briddon, phys. stat. sol. (b) 222, 133 (2000)