Precipitation of Cu and Fe in dislocated floating-zone-grown silicon

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 6 SUPPL. A, 1996, Pages 3301-3305

  Shen, Bo ^a   Sekiguchi, Takashi ^b   Zhang, Rong ^a   Shi, Yi ^a   Shi, Hongtao ^a   Yang, Kai ^a   Zheng, Youdou ^a   Sumino, Koji ^b  

^a NANJING UNIVERSITY   (China)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

Cooling rate; Dislocation; Interstitial; Metallic impurity; Precipitation

Indexed keywords

COOLING; COPPER; CRYSTAL GROWTH; ELECTRON BEAMS; INDUCED CURRENTS; IRON; PLASTIC DEFORMATION; PRECIPITATION (CHEMICAL); SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON; SPECIMEN PREPARATION; TRANSMISSION ELECTRON MICROSCOPY;

CHEMICAL ETCHING; ELECTRON BEAM INDUCED CURRENT; METALLIC IMPURITY; SCANNING INFRARED MICROSCOPE; TRANSMISSION ELECTRON MICROGRAPHY;

DISLOCATIONS (CRYSTALS);

EID: 0030170287     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.3301     Document Type: Article

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