Impact of phosphorus diffusion on the contamination level of dislocations in deformed float zone silicon as studied by beam injection techniques

Solid State Phenomena

Volumn 63-64, Issue , 1998, Pages 105-114

  Knobloch, K ^a   Kittler, M ^a   Seifert, W ^a   Simon, J J ^b   Perichaud I ^b  

^a IHP   (Germany)

^b AIX MARSEILLE UNIVERSITY   (France)

Author keywords

Dislocations; DLTS; EBIC; FZ Silicon; Gettering; LBIC; Phosphorus Diffusion

Indexed keywords

CONTAMINATION; CRYSTAL GROWTH FROM MELT; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; ELECTRON IRRADIATION; INDUCED CURRENTS; PARTICLE BEAM INJECTION; PHOSPHORUS;

DIFFUSION GETTERING; ELECTRON BEAM INDUCED CURRENT (EBIC) METHODS;

SILICON WAFERS;

EID: 17344363325     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.63-64.105     Document Type: Article

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