The role of defects in semiconductor materials and devices

Scanning Microscopy

Volumn 10, Issue 4, 1996, Pages 1047-1078

  Holt, D B ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Devices; Dislocations; Electrical effects; Failure; Impurity decoration; Yield

Indexed keywords

COPPER;

ARTICLE; CONDUCTOR; ELECTRON BEAM; LIGHT EMITTING DIODE; LUMINESCENCE; MATERIAL STATE; MATHEMATICAL MODEL; MICROSCOPY; OPTICS; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR;

EID: 0030561743     PISSN: 08917035     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

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2. Bardsley W (1960) The electrical effects of dislocations in semiconductors. Prog. Semicond. 4, 155-203.
3. Elliott CR, Regnault JC (1981) Birefringence studies of defects in III-V semiconductors. In: Microscopy of Semiconducting Materials 1981. Inst. Phys. (Bristol) Conf. Series No. 60. pp. 365-370.
4. Fell TS, Wilshaw PR (1989) Recombination at dislocations in the depletion region in silicon. In: Structure and Properties of Dislocations in Semiconductors 1989. Inst. Phys. (Bristol) Conf. Series No. 104. pp. 227-232.
5. Hull R, Bean J (1994) In situ observations of misfit dislocations in lattice-matched epitaxial semiconductor heterostructures. Materials Res. Soc. Bulletin (Sept.), 32-37.
6. Ishida K, Kamejima T, Matsumoto Y, Endo K (1982) Lattice defect structure of degraded InGaAsP-InP double-heterostructure lasers. Appl. Phys. Lett. 40, 16-17.
7. Mueller RK, Jacobson RL (1959) Grain boundary photovoltaic cell. J. Appl. Phys. 30, 121-122.
8. Neubert D, Kos J, Hahn D (1973) Problems of life-time doping by dislocation in silicon. In: Solid State Devices 1972. Inst. Phys. (London, now in Bristol) Conf. Series No. 15. 220 (abstract).
9. Rozgonyi GA, Salih ASM, Radzimski ZJ, Kola RR, Honeycutt J, Bean KE, Lindberg K (1987) Defect engineering for VLSI epitaxial silicon. J. Crystal Growth 85, 300-307.
10. Sauer R, Weber J, Stolz J, Weber ER, Kuslers KH, Alexander H (1985) Dislocation-related photoluminescence in silicon. Appl. Phys. A36, 1-13.