The nature of the electronic states of Cu3Si-precipitates in silicon

Solid State Phenomena

Volumn 63-64, Issue , 1998, Pages 369-374

  Sattler, A ^a   Hedemann, H ^a   Istratov, A A ^b   Seibt, M ^a   Schroter W ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Bandlike States; Copper Suicide Precipitates; Internal Ripening; Neutral Occupation Limit

Indexed keywords

ANNEALING; COPPER COMPOUNDS; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION IN SOLIDS; ENERGY GAP; INTERFACES (MATERIALS); PRECIPITATION (CHEMICAL); QUENCHING;

COPPER SILICIDE;

SEMICONDUCTING SILICON;

EID: 17344364212     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

References (26)

1. P. D. Augustus, J. Knight, and L. W. Kennedy, J. of Microsc. 118 (1980), p. 315.
2. A. Broniatowski, Phys. Rev. Lett. 62 (1989), p. 3074.
3. A. Correia, D. Ballutaud, and J.-L. Maurice, Jap. J. Appl. Phys. 33 (1994), p. 1217.
4. M. Grieß, Ph.D. thesis, Göttingen (1991).
5. A. A. Istratov, H. Hedemanǹ, M. Seibt, O. F. Vyvenko, W. Schröter, C. Flink, T. Heiser, H. Hieslmair und E. R. Weber, in: Semiconductor Silicon 1998, H. R. Huff, U. M. Gösele, and H. Tsuya, (The Electrochem. Soc., Pennington), p. 948.
6. H. Hedemann and W. Schröter, Journal de Physique III (1997), 7, p. 1389.
7. H. Hedemann, Ph.D. thesis, Cuvillier-Verlag Göttingen, ISBN 3-89588-377-8 (1995).
8. H. Hedemann and W. Schröter, to be published.
9. M. El Kajbaji and J. Thibault, Phil. Mag. Lett. 71 (1995), p. 335.
10. M. Kittler, J. Lärz, W. Seifert, M. Seibt, and W. Schröter, Appl. Phys. Lett. 58 (1991), p. 911.
11. D. N. Leong, M. A. Harry, K. J. Reeson, and K. P. Homewood, Appl. Phys. Lett. 68 (1996), p. 1649.
12. D. N. Leong, M. A. Harry, K. J. Reeson, and K. P. Homewood, Nature 387 (1997), p. 686.
13. E. Nes, Acta Metall. 22 (1974), p. 81.
14. D. Pons, J. Appl. Phys, (1984), p. 3644.
15. F. Riedel, Ph.D. thesis, Cuviellier-Verlag Göttingen, ISBN 3-89588-111-2 (1995).
16. F. Riedel, J. Kronewitz, U. Gnauert, M. Seibt, W. Schröter, Solid State Phenomena 47/48 (1995), p. 359.
17. F. Riedel et al., to be published.
18. R. Rizk, X. Portier, G. Allais, and G. Nouet, J.Appl.Phys. 76 (1994), p. 952.
19. W. Schröter, J. Kronewitz, U. Gnauert, F. Riedel and M. Seibt, Phys. Rev. B, 52 (1995), p. 13726.
20. A. Sattler, Diplomarbeit, Göttingen (1997).
21. M. Seibt, M. Griess, A.A. Istratov, H. Hedemann, A. Sattler, W. Schröter, phys. stat. sol. (a) 166 (1998), p. 171.
22. M.Seibt and W.Schröter, Phil. Mag. A 59 (1989), p. 337.
23. M.Seibt, in: Semiconductor Silicon 1990, Hrsg.: H.Huff, K.Barraclough und J. Chikawa, (The Electrochemical Society, Pennington 1990), p. 663.
24. M.Seibt, in: Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing II PV 97-22, B.O.Kolbesen, P.Stallhofer, C.Clays, and F.Tardiff (eds.), (The Electrochem.Soc., 1997), p. 243.
25. H.Wendt, H.Cerva, V.Lehmann, and W.Palmer, J.Appl.Phys. 65 (1989), p. 2402.
26. G. Zoth, Diplomarbeit, Göttingen (1980).