Influence of electric field-enhanced emission on deep level transient spectra of bandlike extended defects: NiSi2-precipitates in silicon

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 293-298

  Hedemann, H ^a   Schroter W ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

Bandlike states; DLTS; Extended defects; Poole frenkel effect; Precipitates

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRIC FIELDS; NICKEL COMPOUNDS; PRECIPITATES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SILICON COMPOUNDS; BAND STRUCTURE; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; ELECTRONIC DENSITY OF STATES; SEMICONDUCTING SILICON;

BANDLIKE STATES; DEFORMATION POTENTIAL; ELECTRIC FIELD DEPENDENCE; EXTENDED DEFECT; NISI2; POOLE-FRENKEL EFFECT; RECOMBINATION CENTRES; TRANSIENT SPECTRA;

POWER QUALITY; CRYSTAL DEFECTS;

POOLE FRENKEL EFFECT;

EID: 16944364480     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

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