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Volumn 35, Issue 14, 1987, Pages 7575-7584

Pressure dependence of impurity levels in semiconductors: The deep gold acceptor level and shallow donor and acceptor levels in silicon

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EID: 18844406433     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.35.7575     Document Type: Article
Times cited : (31)

References (42)
  • 1
    • 84926558753 scopus 로고    scopus 로고
    • See, e.g., W. Paul and D. M. Warschauer, Solids Under Pressure, edited by W. Paul and D. M. Warschauer (McGraw-Hill, New York, 1963) Chap. 8, p. 179;
  • 19
    • 84926547471 scopus 로고    scopus 로고
    • See Ref. 12 for a discussion of these points.
  • 28
    • 84926557322 scopus 로고    scopus 로고
    • We had earlier (Ref. 9) reported for ( partial Δ H / partial P) a value of app -3 meV/kbar. The present value of -2.6 +- 0.5 meV/kbar is based on more measurements, and we consider it to be more accurate.
  • 30
    • 84926585460 scopus 로고    scopus 로고
    • In calculating vn we use mnstar = 0.35 m0 for the density-of-states effective mass (see Ref. 12).
  • 39
    • 84926605864 scopus 로고    scopus 로고
    • It should be pointed out that Li et al (Ref. 24) equate partial (Ec - ET ) partial P with partial Δ G / partial P, but, as discussed in the text, partial (Ec -ET )/ partial P = partial Δ H / partial P. The discrepancy is not consequential for the purposes of the present argument.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.