The ring-hexavacany in silicon: A stable and inactive defect

Applied Physics Letters

Volumn 70, Issue 4, 1997, Pages 432-434

  Estreicher, S K ^a   Hastings, J L ^a   Fedders, P A ^b  

^a TEXAS TECH UNIVERSITY   (United States)

^b WASHINGTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000928030     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118172     Document Type: Article

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