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Volumn 56, Issue 20, 1997, Pages R12706-R12709

Interaction of vacancies with partial dislocations in silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001627652     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.R12706     Document Type: Article
Times cited : (21)

References (37)
  • 16
    • 0000541543 scopus 로고
    • H. Alexander, in Dislocations in Solids, edited by F.R.N. Nabarro (North Holland, Amsterdam, 1986), Vol. 7, p. 113.
    • (1986) Dislocations in Solids , vol.7 , pp. 113
    • Alexander, H.1
  • 28
  • 35
    • 84948974513 scopus 로고
    • H. Teichler, in Polycrystalline Semiconductors II, edited by J.H. Werner and H.P. Strunk, Springer Proceeding in Physics Vol. 54 (Springer-Verlag, Heidelberg, 1991), p. 134.
    • (1991) Polycrystalline Semiconductors II , pp. 134
    • Teichler, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.