Theoretical aspects of the minority carrier recombination at dislocations in semiconductors

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 110-121

  Farvacque, Jean Louis ^a  

^a UNIV LILLE   (France)

Author keywords

Minority carriers; Recombination process; Semiconductors

Indexed keywords

APPROXIMATION THEORY; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ELECTRON BEAMS; ELECTRON ENERGY LEVELS; ENERGY GAP; INDUCED CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

DIFFUSION EQUATIONS; ELECTRON BEAM INDUCED CURRENTS (EBIC); LAX CAPTURE; MINORITY CARRIERS; RECOMBINATION PROCESS;

CHARGE CARRIERS;

EID: 0001559930     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01691-1     Document Type: Article

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