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Volumn 71, Issue 1-3, 2000, Pages 24-29

Do we really understand dislocations in semiconductors?

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; POINT DEFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON;

EID: 0033874843     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00344-X     Document Type: Article
Times cited : (44)

References (54)
  • 18
    • 0009103640 scopus 로고
    • Structure and properties of dislocations in semiconductors
    • M.I. Heggie, R. Jones, Structure and properties of dislocations in semiconductors, Inst. Phys. Conf. Ser. 87 (1987) 367.
    • (1987) Inst. Phys. Conf. Ser. , vol.87 , pp. 367
    • Heggie, M.I.1    Jones, R.2
  • 24
    • 0002417558 scopus 로고
    • H. Ehrenreich, J. Turnbull (Eds.), Academic Press, New York
    • H. Alexander, P. Haasen, in: H. Ehrenreich, J. Turnbull (Eds.), Solid State Physics, Academic Press, New York, 1968, p. 27.
    • (1968) Solid State Physics , pp. 27
    • Alexander, H.1    Haasen, P.2
  • 27
    • 85031595262 scopus 로고
    • Inst, of Phys. Conf. Ser., A.G. Cullis, S.M. Davidson, G.R. Booker
    • P.B. Hirsch, Inst, of Phys. Conf. Ser., Microscopy of Semiconducting Materials, A.G. Cullis, S.M. Davidson, G.R. Booker, 67 (1983) 1.
    • (1983) Microscopy of Semiconducting Materials , vol.67 , pp. 1
    • Hirsch, P.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.