EBIC defect characterisation: State of understanding and problems of interpretation

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 8-13

  Kittler, M ^a   Seifert, W ^a  

^a IHP   (Germany)

Author keywords

Defect characterisation; Electron beam induced current; Semiconductors

Indexed keywords

CHARGE CARRIERS; ELECTRON BEAMS; INDUCED CURRENTS; SEMICONDUCTOR DEVICE MODELS;

DEFECT CONTRAST; ELECTRON BEAM INDUCED CURRENT (EBIC);

CRYSTAL DEFECTS;

EID: 0002098154     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01677-7     Document Type: Article

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