High-Temperature Properties of Transition Elements in Silicon

Handbook of Semiconductor Technology: Electronic Structure and Properties of Semiconductors

Volumn 1, Issue , 2008, Pages 597-660

  Schröter, Wolfgang ^a   Seibt, Michael ^a   Gilles, Dieter ^b  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

Compilations of diffusion data; Extrinsic silicon; Intensive research activities; Metallic atoms; Transition elements

Indexed keywords

SILICON;

DIFFUSION DATA; INTENSIVE RESEARCH; TRANSITION ELEMENT;

TRANSITION METALS;

EID: 84948955492     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/9783527621842.ch10     Document Type: Chapter

References (232)

1. Aalberts, J. H., Verheijke, M. L. (1962), Appl. Phys. Lett. 1, 19.
2. Aoki, M., Hara, A., Ohsawa, A. (1992), J. Appl. Phys. 72, 895.
3. Apel, M., Hanke, I., Schindler, R., Schröter, W. (1994), J. Appl. Phys. 76, 4432.
4. Augustus, P. D. (1983a), Inst. Phys. Conf. Ser. No. 67, 229.
5. Augustus, P. D. (1983 b), in: Defects in Silicon, Pennington, NJ: The Electrochem. Soc, p. 414.
6. Augustus, P. D., Knights, J., Kennedy, L. W. (1980), J. Microsc. 118, 315.
7. Bakhadyrkhanov, M. K., Zainabidov, S., Khamidov, A. (1980), Sov. Phys. Semicon. 14, 243.
8. Baumann, F. H., Schröter, W. (1991), Phys. Rev. B43(8), 6510.
9. Beeler, F., Anderson, O. K., Scheffler, M. (1985), Phys. Rev. Lett. 55, 1498.
10. Bendik, N. T., Garnyk, V. S., Milevskii, L. S. (1970), Sov. Phys. -Solid State 12, 150.
11. Bergholz, W. (1983), Physica 116B, 312.
12. Binns, M. J., Brown, W. P., Wilkes, J. G., Newman, R. C, Livingston, F. M., Messoloras, S., Stewart, R. J. (1983), Appl. Phys. Leu. 42, 525.
13. Binns, M. J., Brown, W. P., Wilkes, J. G. (1984), J. Phys. CI 7, 6253.
14. Boit, C, Lau, F., Sittig, R. (1990), Appl. Phys. A50, 197.
15. Borghesi, A., Pivac, B., Sassella, A., Stella, A. (1995), J. Appl. Phys. 77, 4169.
16. Bourret, A. (1986), in: Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon: Mikkelsen, J. L., Jr., Pearton, S. J., Corbett, J. W., Pennycook, S. J. (Eds.). Pittsburgh, PA: Materials Research Society, pp. 223-240.
17. Bourret, A., Schröter, W. (1984), Ultramicroscopy 14, 97.
18. Broniatowski, A. (1989), Phys. Rev. Lett. 62, 3074.
19. Broniatowski, A., Haut, C. (1990), Phil. Mag. Lett. 62, 407.
20. Bronner, G., Plummer, J. (1987), in: 17th European Solid State Device Research Conference: Soncini, G., Calzolari, P. V. (Eds.). Amsterdam: North-Holland, p. 557.
21. Brown, A. A., Moynagh, P. B., Rosser, P. J. (1988), in: EMIS Datareviews Series No. 4: INSPEC, London, p. 327.
22. Brown, M., Jones, C. L., Willoughby, A. F. W. (1975), Solid-State Electron. 18, 763.
23. Cagnina, S. F. (1969), J. Electrochem. Soc. 116, 498.
24. Cerva, H., Wendt, H. (1989a), Inst. Phys. Conf. Ser. No. 100, 587.
25. Cerva, H., Wendt, H. (1989b), Mater. Res. Soc. Proc. 138, 533.
26. Cerofolini, F., Ferla, G. (1981), in: Semiconductor Silicon 1981: Huff, H. R., Kriegler, J., Takeishi, Y. (Eds.). Pennington, NJ: The Electrochemical Society, p. 724.
27. Chen, M. C, Silvestrii, V. J. (1982), J. Electrochem. Soc. 129, 1294.
28. Chen, M. C, Milnes, A. G., Rohatgi, A. (1979), J. Electrochem. Soc. 129, 1294.
29. Cherns, D., Anstis, A. G., Hutchinson, J. L., Spence, J. C. H. (1982), Phil. Mag. A46, 849.
30. Collins, C. B., Carlson, R. O., Gallagher, C. J. (1957), Phys. Rev. 105, 1168.
31. Correia, A., Ballutaud, D., Boutry-Forveille, A., Maurice, J. L. (1995), J. Appl. Phys. 78, 6543.
32. Correia, A., Pichaud, B., Shorte, A., Quorin, J. B. (1996), J. Appl. Phys. 79, 2145.
33. Corbett, J. W., Deak, P., Lindström, J. L., Roth, L. M., Snyder, L. C. (1989), in: Materials Science Forum, Vol. 38-41: Ferenczi, G. (Ed.). Aedermannsdorf; Switzerland: Trans Tech, p. 579.
34. Cullis, A. G., Katz, L. E. (1974), Phil. Mag. 30, 1419.
35. Darken, L. S., Guroy, R. W. (1953), Physical Chemistry of Metals. New York: McGraw-Hill, p. 61.
36. Das, G. (1972), J. Appl. Phys. 44, 4459.
37. Dash, W. C. (1956), J. Appl. Phys. 27, 1193.
38. Dorward, R. C, Kirkaldy, J. S. (1968), Trans. ALME 242, 2055.
39. Dusausoy, Y., Protas, J., Wandji, R., Roques, B. (1971), Acta Cryst. B27, 1209.
40. Ehrenberg, W. (1950), Proc. Phys. Soc. London 63A, 75.
41. EI Kajbaji, M., Thibault, J. (1995), Phil. Mag. Lett. 71, 335.
42. Ewe, H. (1996), Ph.D. Thesis, Göttingen.
43. Ewe, H., Gilles, D., Hahn, S. K., Seibt, M., Schröter, W. (1994), in: Semiconductor Silicon 1994: Huff, H. R., Bergholz, W., Sumino, K. (Eds.). Pennington, NJ: The Electrochemical Society, p. 796.
44. Ewe, H., Schröter, W., Gilles, D. (1999), unpublished.
45. Fahey, P., Dutton, R. W., Hu, S. M. (1984), Appl. Phys. Lett. 44, 111.
46. Falster, R. (1985), Appl. Phys. Lett. 46, 737.
47. Falster, R. (1989), in: Gettering and Defect Engineering in Semiconductor Device Technology. Kittler, M. (Ed.). Vaduz, Liechtenstein: Sei. Tech., p. 13.
48. Falster, R., Bergholz, W. (1990), J. Electrochem. Soc. 137, 1548.
49. Falster, R., Laczik, Z., Booker, G. R., Trk, P. (1991), Solid State Phenomena 11-12, 33.
50. Fell, T. S., Wilshaw, P. R., de Coteau, M. D. (1993), Phys. Status Solidi (a) 138, 695.
51. Figielski, T. (1978), Solid State Electron. 21, 1403.
52. Flink, C, Feick, H., McHugo, S. A., Mohammed, A., Seifert, W, Hieslmair, H., Heiser, T., Istratov, A. A., Weber, E. R. (1999a), Physica B 273-274, 437.
53. Flink, C, Feick, H., McHugo, S. A., Seifert, W., Hieslmair, H., Heiser, T., Istratov, A. A., Weber, E. R. (1999b), Phys. Rev. Lett., submitted.
54. Frank, W. (1991), Defect Diffusion Forum 75, 121.
55. Gelsdorf, F., Schröter, W. (1984), Phil. Mag. A49, L35.
56. Gilles, D., Bergholz, W., Schröter, W. (1986), J. Appl. Phys. 59, 3590.
57. Gilles, D., Schröter, W., Bergholz, W. (1990a), Phys. Rev. B41, 5770.
58. Gilles, D., Weber, E. R., Hahn, S. K. (1990b), Phys. Rev. Lett. 64, 196.
59. Gilles, D., Weber, E. R., Hahn, S. K., Monteiro, O. R., Cho, K. (1990c), in: Semiconductor Silicon 1990: Huff, H. R., Barraclough, K. G., Chikawa, Y. I. (Eds.). Pennington, NJ: The Electrochemical Society, p. 697.
60. Girisch, R. B. M. (1993), in: Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing, Pennington, NJ: Electrochem. Soc. PV 93-15, 170.
61. Goldschmidt, B. M. (1928), Z. Phys. Chem. 133, 397.
62. Gottschalk, H. (1993), Phys. Status Solidi (a) 137, 447.
63. Graff, K. (1983), in: Aggregation of Point Defects in Silicon: Sirtl, E., Goorissen, J. (Eds.). Pennington NJ: The Electrochem. Soc, p. 121.
64. Graff, K. (1986), in: Semiconductor Silicon 1986: Huff, H. R., Abe, T., Kolbesen, B. O. (Eds.). Pennington, NJ: The Electrochemical Society, p. 121.
65. Graff, K. (1995), Metal Impurities in Silicon-Device Fabrication. Berlin: Springer.
66. Graff, K., Hefner, H. A., Pieper, H. (1985), Mater. Res. Soc. Proc. 36, 19.
67. Griffoen, C. C, Evans, J. H., De Jong, P. C, Van Veen, A. (1987), Nucl. Instrum. Methods B 27, 417.
68. Grillot, P. N., Ringel, S. A., Fitzgerald, E. A., Watson, G. P., Xie, Y. H. (1995), J. Appl. Phys. 77, 676.
69. Haasen, P. (1978), Physical Metallurgy. Cambridge:Cambridge University Press.
70. Hahn, S., Arst, M., Ritz, K. N., Shatas, S., Stein, H. J., Rek, Z. U., Tillerm, W. A. (1988), J. Appl. Phys. 64, 849.
71. Hall, J. J. (1967), Phys. Rev. 161, 756.
72. Hall, R. R., Racette, J. H. (1964), J. Apl. Phys. 35, 329.
73. Ham, F. S. (1958), J. Phys. Chem. 6, 335.
74. Hauber, J. (1986), Ph.D. Thesis, Stuttgart.
75. Hauber, J., Frank, W., Stolwijk, N. A. (1989), Mater. Sei. Forum 38-41, 707.
76. Hayamizu, Y., Ush, S., Takaneka, T. (1992), Mater. Res. Soc. Proc. 262, 1005.
77. Hayamizu, Y., Tobe, S., Takeno, H., Kitagawa, Y. (1998), in: Semiconductor Silicon 1998: Huff, H. R., Gösele, U. M., Tsuya, H. (Eds.). Pennington, NJ:The Electrochem. Soc, p. 1080.
78. Heiser, T., Mesli, A. (1992), Phys. Rev. Lett. 68, 978.
79. Heiser, T., Mesli, A. (1996), Appl. Phys. Lett. 68, 1868.
80. Heiser, T., Weber, E. R. (1998), Phys. Rev. B58, 3893.
81. Hieslmair, H., Istratov, A. A., McHugo, S. A., Flink, C, Weber, E. R. (1998), in: Semicoductor Silicon 1998: Huff, H. R., Gösele, U. M., Tsuya, H. (Eds.). Pennington, NJ: The Electrochem. Soc, p. 1126.
82. Hocine, S., Mathiot, D. (1988), Appl. Phys. Lett. 53, 1269.
83. Hocine, S., Mathiot, D. (1989), Mater. Sei Forum 38-A1, 725.
84. Honda, K., Ohsawa, A., Toyokura, N. (1984), Appl. Phys. Lett. 45, 270.
85. Honda, K., Ohsawa, A., Toyokura, N. (1985), Appl. Phys. Lett. 46, 582.
86. Honda, K., Nakanishi, T., Ohsawa, A., Toyokura, N. (1987), Inst. Phys. Conf. Ser. 87, 463.
87. Hrostowski, H. J., Kaiser,R. H. (1959), J Phys. Chem. Solids 9, 214.
88. Hu, S. M. (1981), J. Appl. Phys. 52, 3974.
89. Isobe, T., Nakashima, H., Hashimoto, K. (1989), J. Appl. Phys. 28, 1282.
90. Istratov, A. A., Flink, C, Hieslmair, H., Weber, E. R. (1998a), Phys. Rev. Lett. 81, 1243.
91. Istratov, A. A., Hedemann, H., Seibt, M., Vyvenko, O. F., Schröter, W., Flink, C, Heiser, T., Hieslmair, H., Weber, E. R. (1998b), J. Electrochem. Soc. 145, 3889.
92. Kanamori, M., Tsuya, H. (1985), J. Appl. Phys. 24, 557.
93. Keating, P. N. (1966), Phys. Rev. 145, 637.
94. Keller, R., Deicher, M., Pfeiffer, W., Skudlik, H., Steiner, M., Wiehert, T. (1990), Phys. Rev. Lett. 65, 2023.
95. Kimerling, L. C, Patel, J. R. (1979), Appl. Phys. Lett. 34, 73.
96. Kissinger, G., Morgenstern, G., Richter, H. (1994), J. Appl. Phys. 75, 4994.
97. Kitagawa, H., Nakashima, H. (1987), Phys. Status Solidi (a) 102, K25.
98. Kitagawa, H., Nakashima, H. (1989), Jpn. J. Appl. Phys. 28, 305.
99. Kittler, M., Seifert, W. (1993a), Scanning 15, 316.
100. Kittler, M., Seifert, W. (1993b), Phys. Status Solidi (a) 150, 463.
101. Kittler, M., Lärz, J., Seifert, W., Seibt, M., Schröter, W. (1991), Appl. Phys. Lett. 58, 911.
102. Kola, R. R., Rozgonyi, G. A., Li, J., Rogers, W. B., Tan, T. Y., Bean, K. E., Lindberg, K. (1989), Appl. Phys. Lett. 55, 2108.
103. Kolbesen, B. O., Bergholz, W., Wendt, H. (1989), in:Mater. Sei. Forum, Vol. 38-41: Ferenczi, G. (Ed.). Aedermannsdorf; Trans Tech, p. 1.
104. Koveshnikov, S. V., Rozgnonyi, G. A. (1995), Appl. Phys. Lett. 66, 860.
105. Krentsis, R. P., Gel'd, P. V., Kalishevich, G. I. (1963), Izv. Vysshikh Uchebn. Zavedenii, Chernaya Met. 6, 146.
106. Kühnapfel, R. (1987), Diploma Thesis, Göttingen.
107. Kühnapfel, R., Schröter, W. (1990), in: Semiconductor Silicon 1990: Huff, H. R., Barraclough, K. G., Chikawa, Y. I. (Eds.). Pennington, NJ: The Electrochemical Society, p. 651.
108. Kveder, V. V. Schröter, W., Sattler, A., Seibt, M. (2000), Mater. Sei. Eng. B 71, 175.
109. Lee, D. M., Posthill, J. B., Shimura, F., Rozgony, G. A. (1988), Appl. Phys. Lett. 53, 370.
110. Lee, D. M., Mäher, D. M., Shimura, F., Rozgonyi, G.A. (1990), in: Semiconductor Silicon 1990: Huff, H.R., Barraclough, K. G., Chikawa, Y. I. (Eds.). Pennington, NJ: The Electrochem. Soc, p. 639.
111. Lemke, H. (1981), Phys. Status solidi (a) 64, 549.
112. Lescronier, D., Paugam, J., Pelous, G., Richou, F., Salvi, M. (1981), J. Appl. Phys. 52, 5090.
113. Liehr, M., Bronner, G. B., Lewis, J. E. (1988a), Appl. Phys. Lett. 52, 1892.
114. Liehr, M., Dallaporta, H., Lewis, J. E. (1988b), Appl. Phys. Lett. 53, 589.
115. Lisiak, K. P., Milnes, A. G. (1975), Solid-State Electron. 18, 533.
116. Livingston, F. M., Messoloras, S., Newman, R. C, Pike, B. C, Stewart, R. J., Binns, M. J., Brown, W. P., Wilkes, J. G. (1984), J. Phys. C17, 6263.
117. Ludwig, G. W., Woodbury, H. H. (1962), Solid State Phys. 13, 223.
118. Marioton, B. P. R., Gösele, U. (1988), J. Appl. Phys. 63, 4661.
119. Massalski, T. B., Okamoto, H. (1990), in: Binary Alloy Phase Diagrams: Suhramanian, P. R., Kacpr-zak, L. (Eds.). Materials Park, OH: AMS Int.
120. Maurice, J. L., Colliex, C. (1989), Appl. Phys. Lett. 55, 241.
121. McHugo, S. A., McDonald, R. J., Smith, A. R., Hurley, D. L., Weber, E. R. (1998), Appl. Phys. Lett. 73, 1424.
122. Meek, R. L., Seidel, T. E. (1975), J. Phys. Chem. Solids 36, 731.
123. Mesli, A., Heiser, T. (1994), Mater. Sei. Eng. B25, 141.
124. Mesli, A., Heiser, T. (1996), Defect Diffusion Forum 131-132, 89.
125. Mets, E. J. (1965), J. Electrochem. Soc. 112, 420.
126. Mikkelsen, J. C. (1982a), Appl. Phys. Lett. 41, 671.
127. Mikkelsen, J. C. (1982b), Appl. Phys. Lett. 40, 336.
128. Mikkelsen, J. C, Jr. (1986), Mater. Res. Soc. Proc. 59, 19.
129. Morehead, F. F., Lever, R. F. (1986), Appl. Phys. Lett. 48, 151.
130. Mulvaney, B. J., Richardson, W. B. (1987), Appl. Phys. Lett. 51, 1439.
131. Murarka, S. P. (1983), Silicidesfor VLSI Application. Orlando, FL: Academic.
132. Myers, S. M., Petersen, G. A. (1998), Phys. Rev. B57, 7015.
133. Myers, S. M., Petersen, G. A., Seager, C. H. (1996), J. Appl. Phys. 80, 3717.
134. Myers, S. M., Petersen, G. A., Follstaedt, D. M., Seager, C. H., Haedley, T. J., Michael, J. R., Koops, W. D., Verheyden, J., Pattyn, H. (1998), in: Semiconductor Silicon 1998: Huff, H. R., Gösele, U. M., Tsuya, H. (Eds.). Pennington, NJ: The Electrochem. Soc, p. 1151.
135. Myers, S. M., Seibt, M., Schröter, W. (2000), J. Appl. Phys., submitted.
136. Nabarro, F. R. N. (1940), Proc. Roy. Soc. 175, 519.
137. Nakashima, H., Hashimoto, K. (1991), J. Appl. Phys. 69, 1440.
138. Nakashima, H., Hashimoto, K. (1992), Mater. Sei. Forum 83-87, 21.
139. Negrini, P., Nobili, D., Solmi, S. (1975), J. Electrochem. Soc. 122, 1254.
140. Nes, E. (1974), Acta Metall. 22, 81.
141. Nes, E., Lunde, G. (1972), J. Appl. Phys. 43, 1835.
142. Nes, E., Washburn, J. (1971), J. Appl. Phys. 42, 3562.
143. Nobili, D. (1988), EMIS Datarev. Ser. No. 4, 384.
144. Ogino, M. (1982), Appl. Phys. Lett. 41, 847.
145. Omling, P., Weber, E. R., Monteljus, L., Alexander, H., Michel, J. (1985), Phys. Rev. B 32, 6571.
146. Orlowski, M. (1988), Appl. Phys. Lett. 53, 1323.
147. O'Shaughnessy, T. A., Barber, H. D., Thompson, D. A. Heasell, E. L. (1974), J. Electrochem. Soc. 121, 1350.
148. Ourmazd, A., Schröter, W. (1984), Appl. Phys. Lett. 45, 781.
149. Pearton, J., Corbett, J. W., Sliv, T. S. (1987), Appl. Phvs. A43, 153.
150. Pearton, J., Stavola, M., Corbett, J. W. (1989), in: Materials Science Forum, Vols. 38-41: Ferenczi, G. (Ed.). Aedermannsdorf; Switzerland: Trans Tech, p. 25.
151. Picker, C, Dobson, P. S. (1972), Cryst. Lattice Defects 3, 219.
152. Pomerantz, D. (1967), J. Appl. Phys. 38, 5020.
153. Pond, R. C. (1985), in: Poly cry stalline Semiconductors: Harbeke, G. (Ed.). Berlin: Springer, p. 27.
154. Prescha, T, Zundel, X, Weber, J., Prigge, H., Gerlach, P. (1989), Mater. Sei. Eng. B 4, 79.
155. Raineri, V., Fallica, P. G., Percolla, G., Battaglia, A., Barbagallo, M., Campisano, S. U. (1995), J. Appl. Phys. 78, 3727.
156. Reiss, H., Fuller, C. S., Morin, F. J. (1956), Bell Syst. Tech. 35, 535.
157. Riedel, F. (1995), Ph.D. Thesis, Göttingen (Cuvillier Verlag Göttingen, ISBN 3-89588-111-2).
158. Riedel, F., Schröter, W. (2000), unpublished.
159. Riedel, F., Kronewitz, J., Gnauert, U., Seibt, M., Schröter, W. ( 1995), Solid State Phenomena 47-48, 359.
160. Rizk, R., Portier, X., Allais, G., Nouet, G. (1994), J. Appl. Phys. 76, 952.
161. Rizk, R., Ihlal, A., Portier, X. (1995), J. Appl. Phys. 77, 1875.
162. Rodriguez Schachtrup, A., Bracht, H., Yonenanga, I. Mehrer, H. (1997), Defect Diffusion Forum 143-147, 1021.
163. Rohatgi, A., Sana, P., Ramanchalam, M. S., Salami, J., Carter, W. B. (1993), in: Proc. 23rd IEEE Photovoltaic Conference. (IEEE, New York, 1993), p. 224.
164. Rubioff, G. W., Hofmann, K., Liehr, M., Young, D. R. (1987), Phys. Rev. Lett. 58, 2379.
165. Sadoh, T., Nakashima, H. (1991), Appl. Phys. Lett. 58, 1653.
166. Salih, A. S., Kim, H. J., Davies, R. F., Rozgonyi, G. A. (1985), Appl. Phys. Lett. 46, 419.
167. Sattler, A., Hedemann, H., Istratov, A. A., Seibt, M., Schröter, W. (1998), Solid State Phenomena 63-64, 369.
168. Schlesinger, M. E., (1990), Chem. Rev. 90, 607.
169. Schnegg, A., Progge, H., Grundner, M., Hahn, P. D., Jacob, H. (1988), Mater Res. Soc. Proc. 104, 291.
170. Schröter, W., Kühnapfel, R. (1989), in: Point and Extended Defects in Semiconductors: Benedek, G., Cavallini, A., Schröter, W. (Eds.). NATO ASI Series B202, New York: Plenum, p. 95.
171. Schröter, W., Kühnapfel, R. (1990), Appl. Phys. Lett. 56, 2207.
172. Schröter, W., Seibt, M. (1999a), in: Properties of Crystalline Silicon: Hull, R. (Ed.). London: The Institute of Electrical Engineering, p. 543.
173. Schröter, W., Seibt, M. (1999 b), in: Properties of Crystalline Silicon: Hull, R. (Ed.). London: The Institute of Electrical Engineering, p. 561.
174. Schröter, W., Kronewitz, J., Gnauert, U., Riedel, F., Seibt, M. (1995), Phys. Rev. B52, 13726.
175. Seeger, A., Chik, K. P. (1968), Phys. Status Solidi 29, 455.
176. Seibt, M. (1990), in: Semiconductor Silicon 1990: Huff, H. R., Barraclough, K. G., Chikawa, Y. I. (Eds.). Pennington, NJ: The Electrochem. Soc, p. 663.
177. Seibt, M. (1991), Solid State Phenomana 19-20, 45.
178. Seibt, M. (1992), Mater Res. Soc. Proc. 262, 952.
179. Seibt, M., Graff, K. (1988a), J. Appl. Phys. 63, 4444.
180. Seibt, M., Graff, K. (1988b), Mater Res. Soc. proc. 104, 215.
181. Seibt, M., Graff, K. (1989), unpublished.
182. Seibt, M., Schröter, W. (1989), Phil. Mag. A59, 337.
183. Seibt, M., Griess, M., Istratov, A. A., Hedemann, H., Sattler, A., Schröter, W. (1998a), Phys. Status Solidi (a) 166, 171.
184. Seibt, M., Apel, M., Döller, A., Ewe, H., Spiecker, E., Schröter, W., Zozime, A. (1998b), in: Semiconductor Silicon 1998: Huff, H. R., Gösele, U. M., Tsuya, H. (Eds.). Pennington, NJ: Electrochem. Soc, p. 1064.
185. Seibt, M., Hedemann, H., Istratov, A. A., Riedel, F., Sattler, A., Schröter, W. (1999), Phys. Status Solidi (a) 171, 301.
186. Shaikh, A. A., Schröter, W., Bergholz, W. (1985), J. Appl. Phys. 58, 2519.
187. Shen, B., Sekiguchi, T., Jablonski, J., Sumino, K. (1994), J. Appl. Phys. 76, 4540.
188. Shen, B., Sekiguchi, T., Sumino, K. (1995), in: Materials Science Forum, Vols. 196-201: Ferenczi, G. (Ed.). Aerdermannsdorf, Switzerland: Trans Tech, p. 1207.
189. Shen, B., Sekiguchi, T., Zhang, R., Shi, Y., Shi, H., Yang, K., Zheng, Y., Sumino, K. (1996), Jpn. J. Appl. Phys. 35, 3301.
190. Shen, B., Zhang, X. Y., Yang, K., Chen, P., Zhang, R., Shi, Y., Zheng, Y. D., Sekiguchi, T. Sumino, K. (1997), Appl. Phys. Lett. 70, 1876.
191. Shepherd, W. H., Turner, J. A. (1962), J. Phys. Chem. Solids 23, 1697.
192. Shimura, F., (1988), Semiconductor Silicon Crystal Technology. San Diego, CA: Academic.
193. Shockley, W., Moll, J. L. (1960), Phys. Rev. 119, 1480.
194. Silcock, J. M., Tunstall, W. J. (1964), Phil. Mag. 10, 361.
195. Solberg, J. K. (1978), Acta Cryst. A34, 684.
196. Solberg, J. K., Nes, E. (1978a), J. Mater Sei. 13, 2233.
197. Solberg, J. K., Nes, E. (1978b), Phil. Mag. A37, 465.
198. Spiecker, E., Seibt, M., Schröter, W. (1997), Phys. Rev. B 55, 9577.
199. Sprakel, G. J., Fairfield, J. M. (1965), J. Electrochem. Soc. 112, 200.
200. Stacy, W. T., Allison, D. F., Wu, T. C. (1981), in: Semiconductor Silicon 1981: Huff, H. R., Kriegler, R. J., Takeishi, Y. (Eds.). Pennington, NJ: The Electrochem. Soc, p. 354.
201. Stolwijk, N. A., Schuster, B., Hölzl, J. (1984), Appl. Phys. A33, 133.
202. Struthers, J. D. (1956), J. Appl. Phys. 27, 1560.
203. Sveinbjörnsson, E. Ö., Engström, O., Södervall, U. (1993), J. Appl. Phys. 73, 7311.
204. Takahashi, H., Suezawa, M., Sumino, K. (1992), Phys. Rev. B46, 1882.
205. Tan, T. Y., Gardner, E. E., Tice, W. K. (1977), Appl. Phys. Lett. 30, 175.
206. Tan, T. Y., Gafiteanu, R., Joshi, J. M., Gösele, U. M. (1998), in: Semiconductor Silicon 1998: Huff, H. R., Gösele, U. M., Tsuya, H. (Eds.). Pennington, NJ: The Electrochem. Soc, p. 1050.
207. Tice, W. K., Tan, T. Y. (1976), J. Appl. Phys. 28, 564.
208. Trumbore, F. A. (1960), Bell Syst. Tech. J. 39, 205.
209. Tung, R. T., Gibson, J. M., Poate, J. M. (1983), Phys. Rev. Lett. 50, 429.
210. Utzig, J. (1988), J. Appl. Phys. 64, 3629.
211. Utzig, J. (1989), J. Appl. Phys. 65, 3868.
212. Utzig, J., Gilles, D. (1989), Materials Science Forum, Vols. 38-41: Ferenczi, G. (Ed.). Aedermannsdorf, Switzerland: Trans Tech, p. 729.
213. Van Vechten, J. A., Thurmond, C. D. (1976), Phys. Rev. B14, 3539.
214. Verhoef, L. A., Michiels, P. P., Roorda, S., Sinke, W. C. (1990), Mater. Sei. Eng. B7, 49.
215. Wagner, R., Kampmann, R. (1991), in: Materials Science and Technology Vol. 5: Cahn, R. W., Haasen, P., Kramer, E. J. (Eds.). Weinheim: VCH, Chap. 4.
216. Weber, E. R. (1983), Appl. Phys. A30, 1.
217. Weber, E. R., Gilles, D. (1990), in: Semiconductor Silicon 1990: Huff, H. R., Barraclough, K. G., Chikawa, Y. I. (Eds.). Pennington, NJ: The Electrochem. Soc, p. 387.
218. Wendt, H., Cerva, H., Lehmann, V., Palmer, W. (1989), J. Appl. Phys. 65, 2402.
219. Wong, H., Cheung, N. W., Chu, P. K. (1988), Appl. Phys. Lett. 52, 889.
220. Wong-Leung, J., Ascheron, C. E., Petravic, M., Elli-man, R. G., Williams, J. S. (1995), Appl. Phys. Lett. 66, 1231.
221. Wong-Leung, J., Eaglesham, D. J., Sapjeta, J., Jacobson, D. C, Poate, J. M., Williams, J. S. (1998), 7. Appl. Phys. 83, 580.
222. Wosinski, T. (1990), in: Defect Control in Semiconductors: Sumino, K. (Ed.). Amsterdam: North-Holland, p. 1465.
223. Yoshida, M., Furusho, K. (1964), Jpn. J. Appl. Phys. 3, 521.
224. Yang, T. F. (1982), Diploma Thesis, Göttingen. Zener, C. (1952), in: Imperfections of Nearly Perfect Crystals: Shockley, W. (Ed.). New York: Wiley, p. 289.
225. Zhu, J., Barbier, D. (1990), Mater. Res. Soc. Proc. 163, 567.
226. Zhu, J., Diz, J., Barbier, D., Langner, A. (1989), Mater. Sei. Eng. B4, 185.
227. Zunger, A. (1986), Solid State Phys. 39, 275.
228. Benedek, G., Cavallini, A., Schröter, W. (Eds.) (1989), Point and Extended Defects in Semiconductors, NATO ASI Series B 202, New York: Plenum Press.
229. Frank, W. Gösele, U., Mehrer, H., Seeger, A. (1984), "Diffusion in Silicon and Germanium", in: Diffusion in Crystalline Solids: Murch, G. E., Nowick, A. S. (Eds.), Orlando: Academic Press, pp. 64-142.
230. Graff, K. (2000), Metal Impurities in Silicon Device Fabrication, 2nd Edition, Heidelberg: Springer Verlag.
231. Shimura, F. (1988), Semiconductor Silicon Crystal Technology. San Diego: Academic Press.
232. Weber, E. R. (1983), "Transition Metals in Silicon", Appl. Phys. A 30,1.