Multiatomic step formation with excellent uniformity on vicinal (111)A GaAs surfaces by metalorganic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 173, Issue 1-2, 1997, Pages 27-32

  Lee, Jeong Sik ^a   Isshiki, Hideo ^a   Sugano, Takuo ^a   Aoyagi, Yoshinobu ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

(111)a vicinal surface; Metalorganic vapor phase epitaxy; Multiatomic step

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

MULTIATOMIC STEP FORMATION; VICINAL SURFACES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031546882     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00795-6     Document Type: Article

References (7)

1. H.M. Cox, D.E. Aspnes, S.J. Allen, P. Batos, D.M. Hwang, S. Mahajan, M.A. Shahid and P.C. Morais, Appl. Phys. Lett. 57 (1990) 611.
2. T. Fukui and H. Saito, J. Crystal Growth 115 (1996) 61.
3. H. Isshiki, Y. Aoyagi, T. Sugano, S. Iwai and T. Meguro, Appl. Phys. Lett. 63 (1993) 1528.
4. J.-S. Lee, S. Iwai, H. Isshiki, T. Meguro, T. Sugano and Y. Aoyagi, J. Crystal Growth 160 (1996) 21.
5. K. Yang, L.J. Schowalter, B.K. Launch, I.H. Campell and D.L. Smith, J. Vac. Sci. Technol. B 11 (1993) 779.
6. Y. Horikoshi, H. Yamaguchi, F. Briones and M. Kawashima, J. Crystal Growth 105 (1990) 326.
7. T. Nishida, M. Shinohara and N. Inoue, J. Appl. Phys. 78 (1995) 2854.