Integrated oxidation/anneal processes to treat out the LDD side-wall stress from TEOS spacer anisotropic etch

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1997, Pages 85-88

  Ni, Chi Fu ^a   Wu, Sheng Jhy ^a   Chang, Hui Hua ^a   Lan, Chao Yi ^a   Ho, Yen Shih ^a   Harn, Yu Chi ^a   Shu, Shu,n Liang ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ANNEALING; CMOS INTEGRATED CIRCUITS; CRYSTAL DEFECTS; CRYSTALLINE MATERIALS; ELECTRONS; LEAKAGE CURRENTS; OXIDATION; SEMICONDUCTOR JUNCTIONS; SILICATES; TRANSMISSION ELECTRON MICROSCOPY;

JUNCTION LEAKAGE; LIGHTLY DOPED DRAIN (LDD); TETRAETHYLORTHOSILICATE;

IMAGE SENSORS;

EID: 0030644708     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)