Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 11, 2001, Pages

  Kveder, V ^a,c   Kittler, M ^b   Schroter W ^a  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b IHP   (Germany)

^c INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

METAL; SILICON;

ARTICLE; ATOM; CONCENTRATION (PARAMETERS); ELECTRON; ELECTRON BEAM; EXCITATION; MODEL; MOLECULAR DYNAMICS; PURIFICATION; SURFACE CHARGE; TEMPERATURE;

EID: 0034905267     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.115208     Document Type: Article

References (52)

1. T. Heiser and E. R. Weber, Phys. Rev. B, 58, 3893 (1998).
2. D. Gilles, W. Schröter, and W. Bergholz, Phys. Rev. B, 41, 5770 (1990).
3. M. Kittler, C. Ulhaq-Bouillet, and V. Higgs, J. Appl. Phys., 78, 4573 (1995).
4. V. Higgs and M. Kittler, Appl. Phys. Lett., 65, 2804 (1994).
5. M. Kittler and W. Seifert, Scanning, 15, 316 (1993).
6. M. Kittler, W. Seifert, and V. Higgs, Phys. Status Solidi A, 137, 327 (1993).
7. O. Krüger, W. Seifert, M. Kittler, A. Gutjahr, M. Konuma, K. Said, and J. Poortmans, Solid State Phenom., 63–64, 509 (1998).
8. K. Knobloch, M. Kittler, W. Seifert, J. J. Simon, and I. Perichaud, Solid State Phenom., 63–64, 105 (1998).
9. S. Kusanagi, T. Sekiguchi, B. Shen, and K. Sumino, Mater. Sci. Technol., 11, 685 (1995).
10. B. Shen, T. Sekiguchi, and K. Sumino, Jpn. J. Appl. Phys., 35, 3301 (1996).
11. M. Kittler and W. Seifert, Phys. Status Solidi A, 150, 463 (1995).
12. M. Kittler, J. Lärz, W. Seifert, M. Seibt, and W. Schröter, Appl. Phys. Lett., 58, 911 (1991).
13. M. Kittler and W. Seifert, Mater. Sci. Eng. B, 24, 78 (1994).
14. M. Kittler, C. Ulhaq-Bouillet, and V. Higgs, Mater. Sci. Eng. B, 24, 52 (1994).
15. M. Kittler, C. Ulhaq-Bouillet, and V. Higgs, Mater. Sci. Forum, 196–201, 383 (1995).
16. W. Seifert, K. Knobloch, and M. Kittler, Solid State Phenom., 57–58, 287 (1997).
17. C. Donolato in Point and Extended Defects in Semiconductors, edited by G. Benedek, A. Cavallini, and W. Schröter (Plenum New York, 1989) p. 225.
18. M. Kittler and W. Seifert, Mater. Sci. Forum, 196–201, 1123 (1995).
19. H. Alexander and H. Teichler, Dislocations in: Handbook of Semiconductor Technology, edited by K. A. Jackson and W. Schröter (Wiley-VCH, New York, 2000), Vol. 1, p. 291.
20. R. Labusch and J. Hess, Phys. Status Solidi A, 146, 145 (1994).
21. V. V. Kveder, Yu. A. Ossipyan, I. R. Sagdeev, A. I. Shalynin, and M. N. Zolotukhin, Phys. Status Solidi A, 87, 657 (1985).
22. M. Brohl and H. Alexander, Inst. Phys. Conf. Ser., 104, 163 (1989).
23. M. Brohl, M. D. Dressel, H. W. Helberg, and H. Alexander, Philos. Mag. B, 61, 97 (1990).
24. V. Kveder, T. Sekiguchi, and K. Sumino, Phys. Rev. B, 51, 16 721 (1995).
25. Y. Lelikov, Y. Rebane, S. Ruvimov, D. Tarbin, A. Sitnikova, and Y. Shreter, Phys. Status Solidi B, 172, 53 (1992).
26. V. V. Kveder, E. A. Steinman, and H. G. Grimmeiss, Solid State Phenom., 47–48, 419 (1996).
27. V. V. Kveder, E. A. Steinman, S. A. Shevchenko, and H. G. Grimmeiss, Phys. Rev. B, 51, 10 520 (1995).
28. J. L. Farvacque, Mater. Sci. Eng. B, 42, 110 (1996).
29. Landolt-Börnstein L, New Series Vol. 41 B, edited by O. Madelung, U. Rössler, and M. Schulz (Springer-Verlag, Berlin, 1999).
30. Landolt-Börnstein L, Properties of Crystalline Silicon, edited by R. Hull, EMIS Datareviews Series No. 20 (INSPEC, England, 1999).
31. W. Schröter, J. Kronewitz, U. Gnauert, F. Riedel, and M. Seibt, Phys. Rev. B, 52, 13 726 (1995).
32. W. T. Read, Philos. Mag., 45, 775 (1954).
33. J. J. Thomson, Philos. Mag., 47, 337 (1924).
34. L. P. Pitayevskii, Zh. Eksp. Teor. Fiz. 42, 1326 (1962) [Sov. Phys. JETP, 15, 919 (1962)].
35. M. Lax, Phys. Rev., 119, 1502 (1960).
36. V. A. Abakumov and I. N. Yassievich, Zh. Eksp. Teor. Fiz. 71, 657 1976 [Sov. Phys. JETP, 44, 345 (1976)].
37. I. N. Yassievich, in Semiconductor Physics, edited by V. M. Tuchkevich and V. Ya. Frenkel (Consultants Bureau, New York, 1986) p. 519.
38. Y. T. Rebane and Y. G. Shreter, Phys. Status Solidi A, 137, 603 (1993).
39. Y. T. Rebane and J. W. Steeds, Phys. Rev. B, 48, 14 963 (1993).
40. E. B. Sokolova, Fiz. Tekh. Poluprovodn. 3, 1512 1969 [Sov. Phys. Semicond., 3, 1266 (1969)].
41. G. L. Pearson and J. Bardeen, Phys. Rev., 75, 865 (1948).
42. F. J. Morin and J. P. Maita, Phys. Rev., 96, 28 (1954).
43. W. Schröter, Phys. Status Solidi A, 19, 159 (1973).
44. A. Ourmazd, Cryst. Res. Technol., 16, 137 (1981).
45. P. R. Wilshaw and G. R. Booker, Inst. Phys. Conf. Ser., 76, 329 (1985).
46. S. R. Morrison, Phys. Rev., 104, 619 (1956).
47. T. Figielski, Solid-State Electron., 21, 1403 (1978).
48. Yu. V. Gulyaev, Fiz. Tverd. Tela (Leningrad) 4, 1285 (1962) [Sov. Phys. Solid State, 4, 941 (1962)].
49. V. B. Shikin and N. I. Shikina, Phys. Status Solidi A, 108, 669 (1988).
50. L. C. Kimerling, H. J. Leamy, and J. R. Patel, Appl. Phys. Lett., 30, 217 (1977).
51. V. L. Bonch-Bruevich and V. B. Glasko Fiz. Tverd. Tela (Leningrad) 3, 36 (1961) [Sov. Phys. Solid State, 3, 26 (1961)].
52. P. R. Wilshaw, T. S. Fell, and G. R. Booker in Point and Extended Defects in Semiconductors, edited by G. Benedek, A. Cavallini, and W. Schröter (Plenum, New York, 1989), p. 243.