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Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 299-304

The effect of dislocation dissociation on the g-tensor of holes in dislocation related 1D energy band in Si

(4) Kveder, V V a Shalynin, A I a Steinman, E A a Izotov, A N a

a INSTITUTE OF SOLID STATE PHYSICS (Russian Federation)

Author keywords

Dislocations; Energy bands; Spin resonance

Indexed keywords

DEFECTS; DISLOCATIONS (CRYSTALS); DISSOCIATION; SEMICONDUCTOR DEVICE MANUFACTURE; TENSORS; BAND STRUCTURE; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRONIC DENSITY OF STATES; SEMICONDUCTING SILICON; STACKING FAULTS;

DEFORMATION POTENTIAL; EFFECT OF DISLOCATIONS; G TENSORS; SPIN RESONANCE;

BAND STRUCTURE; DISLOCATIONS (CRYSTALS);

DISLOCATION DISSOCIATION; ELECTRIC DIPOLE SPIN RESONANCE (EDSR);

EID: 0031360229 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: 10.4028/www.scientific.net/ssp.57-58.299 Document Type: Article

Times cited : (2)

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