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physica status solidi (b)

Volumn 172, Issue 1, 1992, Pages 53-63

A Classification of the Dislocation‐Related Photoluminescencence in Silicon

(6) Lelikov, Yu S a Rebane, Yu T a,b Ruvimov, S a Sitnikova, A A a Tarhin, D V a Shreter, Yu G a,c

a IOFFE INSTITUTE (Russian Federation)

b UNIVERSITY OF BRISTOL (United Kingdom)

c UNIVERSITY OF MANCHESTER (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84987141712 PISSN: 03701972 EISSN: 15213951 Source Type: Journal
DOI: 10.1002/pssb.2221720107 Document Type: Article

Times cited : (25)

References (46)

1
- 84987095665
- Electrical and Optical Properties of Semiconductors, Ed.
- (1968) Proc. P.N. Lebedev Phys. Inst. , vol.37 , pp. 1
- Gippius, A.¹ Skobel, D.V.²

2
- 0000151432
- (1976) Soviet Phys. ‐ J. exper. theor. Phys. Letters , vol.23 , pp. 597
- Drozdov, H.¹ Patrin, A.² Tkachev, V.³

3
- 0017512726
- (1977) Phys. stat. sol. (a) , vol.42 , pp. 165
- Mergel, D.¹ Labusch, R.²

4
- 0021784155
- Dislocation-related photoluminescence in silicon
- (1985) Applied Physics A Solids and Surfaces , vol.36 , pp. 1
- Sauer, R.¹ Weber, J.² Stoltz, J.³ Weber, E.R.⁴ Küsters, K.H.⁵ Alexander, H.⁶

5
- 27344435341
- (1984) Fiz. tverd. Tela , vol.3 , pp. 677
- Kolubakin, A.¹ Osipyan, Yu.A.² Shevchenko, S.³ Steinman, E.⁴

6
- 0024751957
- (1989) Mater, sci. Enggng. , vol.4 B , pp. 123
- Peaker, A.R.¹ Hamilton, B.² Lahiji, G.R.³ Ture, I.E.⁴ Lorimer, G.W.⁵

7
- 0345778958
- (1989) Inst. Phys. Conf. Ser. No. , vol.104 , pp. 119
- Lelikov, Yu.S.¹ Rebane, Yu.T.² Shreter, Yu.G.³

8
- 0343184259
- J. H. Werner, H. P. Strunk, Springer‐Verlag, Berlin/Heidelberg/New York
- (1990) Polycrystalline Semiconductors II , pp. 28
- Rebane, Yu.T.¹ Shreter, Yu.G.²

9
- 84987076077
- Proc. 16th Internat. Conf. Defects in Semiconductors, Bethlehem
- (1991)
- Lelikov, Yu.S.¹ Rebane, Yu.T.² Ruvimov, S.³ Sitnikova, A.A.⁴ Tarkhin, D.V.⁵ Shreter, Yu.G.⁶

10
- 84902940516
- (1992) Mater. Sci. Forum , vol.83-87 , pp. 1321

11
- 0004277031
- Pergamon Press, London/Oxford
- (1964) Dislocations
- Friedel, J.¹

12
- 0020278562
- (1982) Soviet Sci. Rev. A , vol.4 , pp. 219
- Osipyan, Yu.A.¹

13
- 0020172562
- On the Energy Spectrum of Dislocations in Silicon
- (1982) physica status solidi (a) , vol.72 , pp. 701
- Kveder, V.V.¹ Osipyan, Yu.A.² Schröter, W.³ Zoth, G.⁴

14
- 0343184742
- (1985) J. electronic Mater. , vol.14 a , pp. 387
- Kisielowski‐Kemmeich, C.¹ Weber, G.² Alexander, H.³

15
- 84987128961
- E. Mizera, World Scientific Publ. Co., Singapore
- (1988) Defects in Crystals , pp. 387
- Kisielowski‐Kemmerich, C.¹ Alexander, H.²

16
- 84987076999
- (1984) Soviet Phys. ‐ J. exper. theor. Phys. Lettes , vol.40 , pp. 729
- Kveder, V.¹ Osipyan, Yu.A.² Shalnin, A.³

17
- 0003821087
- G. Landwehr, Springer‐Verlag, Berlin
- (1989) High Magnetic Fields in Semicondctors Physics II , pp. 401
- Rasba, E.I.¹

18
- 33748109279
- (1980) J. of Microscopy , vol.48 , pp. 23
- Schröter, W.¹ Scheibe, E.² Schoen, H.³

19
- 84987116602
- (1983) Japan. J. appl. Phys. , vol.54 , pp. 44526
- Ono, H.¹ Sumino, K.²

20
- 0001963245
- (1974) Appl. Phys. Letters , vol.34 , pp. 73
- Kimerling, L.C.¹ Patel, J.R.²

21
- 84987052823
- C4, 319
- (1983) J. Physique , vol.44
- Weber, E.R.¹ Alexander, H.²

22
- 0040153542
- (1985) Phys. Rev. B , vol.32 , pp. 6571
- Omling, P.¹ Weber, E.R.² Motelius, L.³ Alexander, H.⁴ Michel, J.⁵

23
- 0007708875
- Inst. Phys. Conf. Ser. No. 104
- (1989) , pp. 75
- Schröter, W.¹ Queisser, I.² Kronewitz, J.³

24
- 84902894120
- (1970) Fiz. tekh. Poluprov. , vol.3 , pp. 1266
- Sokolova, E.¹

25
- 84987076923
- (1986) Fiz. tverd. Tela , vol.28 , pp. 235
- Bazenov, A.¹ Krasilnikova, L.²

26
- 84987051306
- Proc. 5th Internat. Conf. Properties and Structure of Dislocation in Semiconductors, Moscow
- (1989) , pp. 27
- Bazenov, A.¹ Krasilnikova, L.²

27
- 0018032164
- (1978) Phys. stat. sol. (b) , vol.90 , pp. 289
- Winter, S.¹

28
- 0017456923
- (1977) Phys. stat. sol. (b) , vol.79 , pp. 637
- Winter, S.¹

29
- 84996159165
- (1970) Phil. Mag. , vol.22 , pp. 853
- Ray, I.L.F.¹ Cockayne, D.J.H.²

30
- 84996228267
- Extended dislocations in germanium
- (1973) Philosophical Magazine , vol.27 , pp. 745
- Häussermann, F.¹ Schaumurg, H.²

31
- 84987052847
- (1986) Phys. Rev. Letters , vol.57 , pp. 105
- Sauer, R.¹ Kisielowski‐Kemmerich, C.² Alexander, H.³

32
- 84987103276
- C6, 127
- (1979) J. Physique , vol.40
- Gottschalk, J.¹

33
- 84987053369
- (1990) Fiz. tverd. Tela , vol.32 , pp. 2774
- Lelikov, Yu.S.¹ Rebane, Yu.T.² Shrter, Yu.G.³

34
- 0016433004
- (1975) Phil. Mag. , vol.31 , pp. 105
- Gomez, A.¹ Cockayne, D.² Hirsch, P.³ Vitek, U.⁴

35
- 11644309352
- (1981) Phys. Rev. Letters , vol.47 , pp. 1859
- Pakulis, E.¹ Jeffries, C.²

36
- 84987076959
- (1964) Disc. Faraday Soc. , vol.30 , pp. 298
- Booker, G.¹

37
- 84983913633
- (1961) J. appl. Phys. , vol.33 , pp. 3281
- Booker, G.¹ Stickler, R.²

38
- 84990727728
- On the stress dependence of the dislocation velocity in silicon
- (1987) Physica Status Solidi (a) , vol.104 , pp. 183
- Alexander, H.¹ Kisielowski‐Kemmerich, C.² Swalski, A.T.³

39
- 0021520106
- (1984) Phys. stat. sol. (a) , vol.86 , pp. 245
- Bender, H.¹

40
- 0024735977
- Climb of dissociated dislocations in silicon
- (1989) Philosophical Magazine A , vol.60 , pp. 385
- Thibault‐Desseaux, J.¹ Kirchner, H.² Riteaux, J.³

41
- 84987143721
- 116 B
- (1983) Physica (Utrecht) , pp. 583
- Alexander, H.¹ Kisielowski‐Kemmerich, C.² Weber, E.R.³

42
- 84987108314
- Inst. Phys. Conf. Ser. No. 104
- (1989) , pp. 461
- van Hellemont, J.¹ Bender, H.² Claeys, C.³

43
- 0003612204
- Wiley, New York
- (1981) Imperfections and Impurities in Semiconductor Silicon
- Ravi, K.¹

44
- 0024702309
- (1989) Semicond. Sci. Technol. , vol.4 , pp. 593
- Higgs, V.¹ Lightowlers, E.² Davies, G.³ Schaffler, F.⁴ Kasper, E.⁵

45
- 84987107187
- (1960) Soviet Phys. ‐ Solid State , vol.2 , pp. 1980
- Milevskii, L.¹

46
- 0342749697
- K. Sumino, North‐Holland Publ. Co., Amsterdam
- (1990) Defect Control in Semiconductors , pp. 89
- Weber, E.R.¹ Gilles, D.²

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