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Physical Review B

Volumn 41, Issue 9, 1990, Pages 5770-5782

Impact of the electronic structure on the solubility and diffusion of 3d transition elements in silicon

(3) Gilles, D a Schroter W a Bergholz, W a

a UNIVERSITY OF GÖTTINGEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001254530 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.41.5770 Document Type: Article

Times cited : (127)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.