Process- and irradiation-induced defects in silicon devices

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 377, Issue 2-3, 1996, Pages 244-257

  Claeys, C ^a   Simoen, E ^a   Vanhellemont, J ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; CRYSTAL DEFECTS; DEFORMATION; ELECTRIC PROPERTIES; ELECTRONS; IRRADIATION; PROTONS; RADIATION DETECTORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES;

IRRADIATION INDUCED DEFECTS; METALLIC CONTAMINATION; PROCESS INDUCED DEFECTS; SILICON DEVICES;

RADIATION DAMAGE;

EID: 0030215817     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(95)01402-0     Document Type: Article

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