Thermal behaviour of deep levels at dislocations in n-type silicon

Journal de Physique III

Volumn 7, Issue 12, 1997, Pages 2361-2366

  Cavalcoli, D ^a   Cavallini, A ^a   Gombia, E ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; CARRIER CONCENTRATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); PLASTIC DEFORMATION; THERMAL CONDUCTIVITY OF SOLIDS;

CONDUCTION BAND EDGE;

SEMICONDUCTING SILICON;

EID: 0031380768     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1997103     Document Type: Article

References (7)

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3. Cavalcoli D., Cavallini A. and Gombia E., Defect states in plastically deformed silicon, Phys. Rev. B 56 (1997) 10208.
4. Omling P., Weber E.R., Montelius L, Alexander H. and Michel J., Electrical properties of dislocations and point defects in plastically deformed silicon, Phys. Rev. B. 32 (1985) 6571.
5. Kveder V.V., Osip'yan Yu.A., Schroeter W. and Zoth G., On the energy spectrum of dislocations in silicon, Phys. Stat. Sol. (a) 72 (1982) 701.
6. Kronewitz J. and Schroeter W., Capacitance transient spectroscopy of 60°-dislocations in silicon, Izvest Acad Nauk USSR Ser. Fiz. 51 (1987) 682.
7. Kisielowski C. and Weber E.R., Inhomogeneities in plastically deformed silicon single crystals. I. ESR and photo-ESR investigations of p- and n-doped silicon, Phys. Rev. B 44 (1991) 1600.