Behaviour of an amphoteric defect under standard DLTS and beam injection DLTS, respectively

Materials Science and Engineering B

Volumn 42, Issue 1-3, 1996, Pages 63-66

  Knobloch, K ^a,b   Alexander, H ^b  

^a IHP   (Germany)

^b UNIVERSITY OF COLOGNE   (Germany)

Author keywords

Amphoteric trap; Electron trap; Silicon

Indexed keywords

ALGORITHMS; CARRIER CONCENTRATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONS; ENERGY GAP; PARTICLE BEAM INJECTION; PLASTIC DEFORMATION; SEMICONDUCTING SILICON; THERMAL EFFECTS;

AMPHOTERIC TRAP; ELECTRON TRAP;

CRYSTAL DEFECTS;

EID: 0042355255     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01684-4     Document Type: Article

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