Energy levels associated with extended defects in plastically deformed n-type silicon

Journal de Physique III

Volumn 7, Issue 7, 1997, Pages 1399-1409

  Cavalcoli, D ^a   Cavallini, A ^a   Gombia, E ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DISLOCATIONS (CRYSTALS); ELECTRON ENERGY LEVELS; PLASTIC DEFORMATION; POINT DEFECTS;

BAND EDGE;

SEMICONDUCTING SILICON;

EID: 0031191844     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1997195     Document Type: Article

References (16)

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