Applications of metallic borides for gate electrodes in CMOS integrated circuits

Reviews on Advanced Materials Science

Volumn 8, Issue 2, 2004, Pages 185-194

  Zagozdzon Wosik, W ^a   Darne, C ^a   Radhakrishnan, D ^a   Rusakova, I ^b   Van der Heide, P ^c   Zhang, Z H ^b   Bennett, J ^d   Trombetta, L ^a   Majhi, P ^b   Matron, D ^e  

^a University of Houston   (United States)

^b UNIVERSITY OF HOUSTON   (United States)

^c University of Houston   (United States)

^d SEMATECH   (United States)

^e UNIVERSITY OF TEXAS HEALTH SCIENCE CENTER AT SAN ANTONIO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORIDES; CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE MEASUREMENT; ELECTRODES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MOS CAPACITORS; MOSFET DEVICES; TITANIUM COMPOUNDS; VOLTAGE MEASUREMENT; ZIRCONIUM COMPOUNDS;

ELECTRON BEAM EVAPORATION; GATE ELECTRODES; METALLIC BORIDES; RAPID THERMAL PROCESSING;

CMOS INTEGRATED CIRCUITS;

EID: 13944251700     PISSN: 16065131     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (62)

1. C.-H. Choi, P.R. Chidambaram, R. Khamankar, C.F. Machala, Z. Yu and R.W. Dutton // IEEE Trans. Electron Devices 23 (2002) 224.
2. C.-H. Choi, RR. Chidambaram, R. Khamankar, C.F. Machala, Z. Yu and R.W. Dutton // IEEE Trans. Electron Devices 49 (2002) 1227.
3. T. Aoyama, K. Suzuki, H. Tashiro, Y. Tada, H. Arimoto and K. Horiuchi // IEEE Trans. Electron Devices 49 (2002)473
4. C. Ren, H. Y. Yu, J. F. Kang, X. P. Wang, H. H. H. Ma, Yee-Chia Yeo, D. S. H. Chan, M.-F. Li and D.-L. Kwong // IEEE Electron Device Lett. 25 (2004) 580.
5. C. Cabral, C. Lavoie, A.S. Ozcan, R. S. Amos, V. Narayanan, E.P. Gusev, J.L.Jordan-Sweet and J. M. E. Harper // J. Electrochem. Soc. 151 (2004) F283.
6. Yee-Chia Yeo, Tsu-Jae King and Chenming Hu // J. Appl. Phys. 92 (2002) 7266.
7. Bing-Yue Tsui and Chih-Feng Huang // IEEE Electron Device Lett. 24 (2003) 153.
8. C. Ren, H. Y. Yu, J. F. Kang, X. P. Wang, H. H. H. Ma, Yee-Chia Yeo, D. S. H. Chan, M.-F. Li and D.-L. Kwong // IEEE Electron Device Lett. 25 (2004) 580.
9. H. Y. Yu, J. F. Kang, C. Ren, J. D. Chen, Y. T. Hou, C. Shen, M. F. Li, D. S. H. V. Chan, K. L. Bera, C. H. Tung and D.-L. Kwong // IEEE Electron Device Lett. 25 (2004) 70.
10. H. Yu Yu, M.-Fu Li and D.-L. Kwong // IEEE Trans. on Electron Devices 51 (2004) 609.
11. Bing-Yue Tsui and Chih-Feng Huang // IEEE Electron Device Lett. 24 (2003) 153.
12. V. Misra, H. Zhong and H. Lazar // IEEE Electron Device Lett. 23 (2002) 354.
13. J. Lee, H. Zhong, You-Seok Suh, G. Heuss, J. Gurganus, Bei Chen and V. Misra // Int. Electron Devices Mtg., IEDM (2002) p. 359.
14. Y.-S. Suh, H. Heuss and V. Misra // J. Vac. Sci. Technol. B 22 (2004) 175.
15. J. K. Schaeffer, S. B. Samavedam, D. C. Gilmer, V. Dhandapani, P. J. Tobin, J. Mogab, B.-Y. Nguyen, B. E. White, Jr., S. Dakshina-Murthy, R. S. Rai, Z.-X. Jiang, R. Martin, M. V. Raymond, M. Zavala, L. B. La, J. A. Smith, R. Garcia, D. Roan, M. Kottke and R. B. Gregory // J. Vac. Sci. Technol. B 21 (2003) 11.
16. P. Ranade, Y.-K. Choi, D. Ha, A. Agarwal, M. Ameen and T.-J. King // Int. Electron Device Mtg. IEDM (2002) p. 363.
17. H. Y. Yu, C. Ren, Yee-Chia Yeo, J. F. Kang, X. P. Wang, H. H. H. Ma, Ming-Fu Li, D. S. H. Chan and D.-L. Kwong // IEEE Electron Device Lett. 25 (2004) 337.
18. C. C. Hobbs, L. R. C. Fonseca, A. Knizhnik, V. Dhandapani, S. B. Samavedam, W. J. Taylor, J. M. Grant, L. G. Dip, D. H. Triyoso, R. I. Hegde, D. C. Gilmer, R. Garcia, D. Roan, M. L. Lovejoy, R. S. Rai, E. A. Hebert, Hsing-Huang Tseng, S. G. H. Anderson, B. E. White and P. J. Tobin // IEEE Trans. Electron Devices 51 (2004) 971.
19. C. C. Hobbs, L. R. C. Fonseca, A. Knizhnik, V. Dhandapani, S. B. Samavedam, W. J. Taylor, J. M. Grant, L. G. Dip, D. H. Triyoso, R. I. Hegde, D. C. Gilmer, R. Garcia, D. Roan, M. L. Lovejoy, R. S. Rai, E. A. Hebert, Hsing-Huang Tseng, S. G. H. Anderson, B. E. White and P. J. Tobin // IEEE Trans. Electron Devices 51 (2004) 978.
20. S. B. Samavedam, L. B. La, P. J. Tobin, B. White, C. Hobbs, L. R. C. Fonseca, A. A. Demkov, J. Schaeffer, E. Luckowski, A. Martinez, M. Raymond, D. Triyoso, D. Roan, V. Dhandapani, R. Garcia, S. G. H. Anderson, K. Moore, H. H. Tseng, C. Capasso, O. Adetutu, D. C. Gilmer, W. J. Taylor, R. Hegde and J. Grant // Int. Electron Device Mtg. IEDM (2003) p. 307
21. M. S. Joo, B. J. Cho, N. Balasubramanian and D.-L. Kwong // IEEE Electron Device Lett. 25 (2004) 716.
22. C. Ren, H. Y. Yu, J. F. Kang, Y.T. Hou, M -F. Li, W. D. Wang, D. S. H. Chan and D.-L. Kwong // IEEE Electron Device Lett. 25 (2004) 123.
23. Chang Seo Park, Byung Jin Cho and Dim-Lee Kwong // IEEE Electron Device Lett. 25 (2004) 372.
24. V. Narayanan, A. Callegari, F. R. McFeely, K. Nakamura, P. Jamison, S. Zafar, E. Carter, A. Steegen, V. Ku, P. Nguyen, K. Milloove, C. Cabral, M. Gribelyuk, C. Wajda, Y. Kawano, D. Lacey, Y. Li, E. Sikorski, E. Duch, H. Ng, C. Wann, R. Jammy, M. leong and G. Shahidi, In: 2004 Symp. on VLSI Technol (2004), p. 192.
25. J. Pan, C. Woo, M.-V. Ngo, J. Xie, D. Matsumoto, D. Murthy, J. S. Goo, Q. Xiang and M.R. Lin // IEEE Trans. Electron Devices 51 (2004) 581.
26. T.-H. Cha, D.-G. Park, T.-K. Kim, S.-A. Jang, I.-S. Yeo, J.-S. Roh and J. W. Park // Appl. Phys. Lett. 81 (2002) 4192.
27. D.-G. Park Tae-Ho Cha; Kwan-Yong Lim; Heung-Jae Cho; Tae-Kyun Kim; Se-Aug Jang; You-Seok Suh; Veena Misra; In-Seok Yeo; Jae-Sung Roh; Jin Won Park and Hee-Koo Yoon // Int. Electron Device Mtg. IEDM (2001) p. 30.6.1.
28. W. P. Maszara, Z. Krivokapic, P. King, J.-S. Goo and M.-R. Lin // IEDM 2002. Digest. International Electron Devices Meeting (2002) p. 367.
29. M. A. Pawlak, J. A. Kittl, O. Chamirian, A. Veloso, A. Lauwers, T. Schram, K. Maex and A. Vantomme // Microelectronic Eng. 76 (2004) 349.
30. J. H. Sim, H. C. Wen, J. P. Lu and D. L. Kwong // IEEE Electron Device Lett. 25 (2004) 610.
31. J. H. Sim, H. C. Wen, J. P. Lu and D. L. Kwong // IEEE Electron Device Lett. 24 (2003) 631.
32. C. Cabral, J. Kedzierski, B. Linder, S. Zafar, V. Narayanan, S. Fang, A. Steegen, P. Kozlowski, R. Carruthers and R. Jammy // Digest of Tech. Papers. 2004 Symp. on VLSI Technol (2004) p. 184.
33. Chang Seo Park, Byung Jin Cho and Dim-Lee Kwong // IEEE Electron Device Lett. 25 (2004) 372.
34. C. Choi, G. C. Xing, G. A. Ruggles and C. M. Osburn // J. Appl. Phys. 69 (1991) 7853.
35. J.R. Shapiro, J. J. Finnegan and R. A. Lux // J. Vac. Sci. Technolol. B 4 (1986) 1409.
36. Boron and Refractory Borides, ed. by V.L. Matkovitch (Springer-Verlag, 1977).
37. W. Zagozdzon-Wosik, R. Ranjit, D. B. Ravindranath, Z. Zhang, J. Charlson, I. Rusakova, P. van der Heide, L. Larson, J. Bennet, R. Tichy and M. Beebe // 10th IEEE Inter. Conf. of Adv. Thermal. Proc. of Sem., RTP 2002 (2002) p. 137.
38. P. Vajeeston, P. Ravindran, C. Ravi and R. Asokamani // Phys. Rev. B 63 (2001) 045115.
39. J. G. Ryan, S. Roberts, G. J. Slusser and E. D. Adams // Thin Solid Films 153 (1982) 329.
40. Y.-K. Lee // J. Crystal Growth 246 (2002) 113.
41. H. Schmidt, G. Borchardt, C. Schmalzried, R. Telle, S. Weber and H. Scherrer // J. Appl. Phys. 93 (2003) 907.
42. C. Choi, Q. Wang, C.M. Osburn, G.A. Ruggles and A.S. Shah // IEEE Trans. El. Devices 39 (1992) 2341.
43. Y-K. Lee // J. Mar. Science 37 (2002) 515.
44. G.Sade and J.Pelleg // Appl. Surf. Sci. 91 (1995) 263.
45. W. Zagozdzon-Wosik, I. Rusakova, S.R. Gooty, D. Marton, J.Li, Z.-H. Zhang, C.-H. Lin, R.J. Bleiler and D.X. Zhang // Mater. Sci. in Semicond. Processing 1 (1998) 243.
46. H. N. Al-Shareef, A. Karamcheti, T. Y. Luo, G. A. Brown, V. H. C. Watt, M. D. Jackson, H. R. Huff, R. Jallepaly, D. Noble, N. Taro and G. Miner / / Mat. Res. Soc. Symp. 611 (2000) C7.15.1.
47. A. Yagishita T. Saito, K. Nakajima, S. Inumiya, K. Matsuo, T. Shibata, Y. Tsunashima, K. Suguro and T. Arikado // IEEE Trans. Electron Dev. 48 (2001) 1604.
48. S. Sadewasser, Th. Glatzel, R. Rusu, A. Jager-Wandau and M. Ch. Lux-Steiner, Appl. Phys. Lett. 80 (2002) 2979.
49. A. Ilie, A. Hart, A. H. Fewitt, J. Robertson and W.I. Mine // J. Appl. Phys. 88 (2000) 6002.
50. D.-G. Park, K.-Y. Lim, H.-J. Chio, T.-H.Cha, I.-S. Yeo, J.-S. Roh and J.-W. Park // Appl. Phys. Lett. 80 (2002) 2514.
51. C. J. Fall, N. Bingeeli and A. Bandereschi // Phys. Rev. B 61 (2000) 8489.
52. Y. Yamamoto and T. Miyokawa // J. Vac. Sci. Technol. B. 16 (1998) 2871.
53. C. J. Fall, N. Binggeli and A. Beldereschi // Phys. Rev. B 65 (2001) 045401.
54. U. Harms and R. B. Swarz // Phys. Rev. B 65 (2002) 085409.
55. K. Zhang and C. M. Osburn // IEEE Trans. Electron Devivces 42 (1995) 2181.
56. E. Rosenbaum and L. F. Register // IEEE Trans. Electron Devices 44 (1997) 317.
57. J. Westlinder, T. Schram, L. Pantisano, E. Cartier, A. Kerber, G. S. Lujan, J. Olsson and G. Groeseneken // IEEE Electron Device Lett. 24 (2003) 550.
58. J. Westlinder, G. Sjoblom and J. Olsson // Microelectronic Eng. 75 (2004) 389.
59. Y. S. Suh, G. P. Heuss and V. Misra // Appl. Phys. Lett. 80 (2002) 1403.
60. M. Mizuno, I. Tanaka and H. Adachi // Phys. Rev. B 59 (1999) 15033.
61. Y-K. Lee // J. Crystal Growth 246 (2002) 113.
62. S.-W. Park, D.-J. Kim, Chan.-H. Lee, S.-C. Lee, N.-Y. Kwak, S.W. Shin, J.-H. Park, M.-S. Suh, Y.-T. Kong, C.-D. Dong and K-S.Yang // J. Electrochem. Soc. 149 (2002) G441.