Mechanism of stress-induced leakage current in MOS capacitors

IEEE Transactions on Electron Devices

Volumn 44, Issue 2, 1997, Pages 317-323

  Rosenbaum, Elyse ^a,b   Register, Leonard F ^b  

^a IEEE   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

Inelastic tunneling; Stress induced leakage current; Trap assisted tunneling

Indexed keywords

CAPACITORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRON TUNNELING; MATHEMATICAL MODELS; MOS DEVICES;

INELASTIC TUNNELING; MOS CAPACITORS; STRESS INDUCED LEAKAGE CURRENT; THICKNESS DEPENDENCE; TRAP ASSISTED TUNNELING;

LEAKAGE CURRENTS;

EID: 0031079521     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.557724     Document Type: Article

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