Wide range work function modulation of binary alloys for MOSFET application

IEEE Electron Device Letters

Volumn 24, Issue 3, 2003, Pages 153-155

  Tsui, Bing Yue ^a   Huang, Chih Feng ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Alloy; Metal gate; Work function

Indexed keywords

BINARY ALLOYS; ELECTRODES; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); METALLIC FILMS; PHOSPHORUS; PHOTORESISTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICA; SILICON WAFERS; THERMAL STRESS; THERMODYNAMIC STABILITY;

HAFNIUM OXIDE; METAL GATE; WORK FUNCTION;

MOSFET DEVICES;

EID: 0037938629     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.809528     Document Type: Letter

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