Work function tuning of fully silicided NiSi metal gates using a TiN capping layer

IEEE Electron Device Letters

Volumn 25, Issue 9, 2004, Pages 610-612

  Sim, J H ^a   Wen, H C ^a   Lu, J P ^b   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; DOPING (ADDITIVES); ELECTRODES; LEAKAGE CURRENTS; MOS CAPACITORS; NICKEL COMPOUNDS; POLYSILICON; SECONDARY ION MASS SPECTROMETRY; TITANIUM NITRIDE; TUNING;

DIELECTRIC BREAKDOWN CHARACTERISTICS; FULL SILICIDATION; GATE DIELECTRICS; METAL GATE ELECTRODES; POLYSILICON DOPANT DISTRIBUTION; TITANIUM NITRIDE CAPPING LAYER;

CMOS INTEGRATED CIRCUITS;

EID: 4444376135     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.833840     Document Type: Article

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